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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Dectector arrays < Deep energy levels < Deep level  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]
Ident.Authors (with country if any)Title
000F01 (2009) Effects of Cr-doping on the optical and magnetic properties in ZnO nanoparticles prepared by sol-gel method
001878 (2004-06-15) 20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source
001C69 (2002-08-15) Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance
001C79 (2002-06-10) Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
001C95 (2002-04) Fe-Diffusion-Induced Defects in InP Annealed in Iron Phosphide Ambient
001E18 (2001-12) Deep Hole Traps Created by Gamma-Ray Irradiation of GaInP
001E33 (2001-09-15) Gamma-Ray Induced Deep Electron Traps in GaInP
001E39 (2001-08-15) Thermal-Treatment Induced Deep Electron Traps in AlInP
002014 (2000-06-01) Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes
002036 (2000-02-14) Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy
002167 (1999-09-15) Positive and negative persistent photoconductivities in semimetallic AlxGa1-xSb/InAs quantum wells
002173 (1999-08-23) Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature
002174 (1999-08-15) A dopant-related defect in Te-doped AlInP
002203 (1999-01-15) Persistent photoconductivity in semimetallic AlxGa1-xSb/InAs quantum wells
002204 (1999-01-11) Majority- and minority-carrier traps in Te-doped AlInP
002296 (1998-11-15) Positron-lifetime study of compensation defects in undoped semi-insulating InP
002313 (1998-06-15) Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy
002326 (1998-04-27) Formation of PIn defect in annealed liquid-encapsulated Czochralski InP
002470 (1997-01-15) Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique
002622 (1996) Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown the molecular beam epitaxy and hydrogen treatment
002736 (1994-12-01) Deep center scattering potential in InGaP

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