Conduction band discontinuity < Conduction bands < Conductive coating

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List of bibliographic references

Number of relevant bibliographic references: 37.
[0-20] [0 - 20][0 - 37][20-36][20-40]

Ident.	Authors (with country if any)	Title
000310 (2013)		Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films
000583 (2012)		Effect of Cerium Doping in the TiO2 Photoanode on the Electron Transport of Dye-Sensitized Solar Cells
000D07 (2009)		Synthesis and photoelectrochemical properties of thin bismuth molybdates film with various crystal phases
000E61 (2009)		First principles study on the properties of p-type conducting In:SnO2
000E87 (2009)		Electronic structure of quantum dots in (111) direction
001879 (2004-06-07)		Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes
001887 (2004-05-03)		Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor
001A55 (2003-12-15)		Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices
001B92 (2003)		Improved performance of 1.3 μm InGaAsP-InP lasers with an AlInAs electron stopper layer
001C03 (2003)		GalnNAs: Growth and characterization
001C26 (2003)		Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer
001C29 (2003)		Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots
001C75 (2002-07-15)		Ordering parameter and band-offset determination for ordered GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells
001C88 (2002-04-29)		Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements
001E48 (2001-05-28)		Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction
002013 (2000-06-12)		Tuning of conduction intersublevel absorption wavelengths in (In,Ga)As/GaAs quantum-dot nanostructures
002017 (2000-05-22)		In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors
002036 (2000-02-14)		Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy
002156 (1999-11-29)		Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer
002177 (1999-07-26)		Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors
002179 (1999-07-12)		Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy

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