Serveur d'exploration sur l'Indium - Analysis (Chine)

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Charge carrier < Charge carrier concentration < Charge carrier density  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
002614 (1996) Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements
002615 (1996) Identification of vacancy-type defects in As-grown InP by positron annihilation rate distribution measurements
002776 (1994) optical and transport properties of δ-doped pseudomorphic AlGaAs/InGaAs/GaAs structures
002811 (1993) Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering
002867 (1992) Indium ohmic contacts to n-ZnSe
002877 (1992) Effect of substrate misorientation on the optical properties and hole concentration of Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by low pressure metalorganic vapor phase epitaxy
002895 (1991) Tellurium and zinc doping in In0.32Ga0.68P layers grown by liquid-phase epitaxy
002906 (1991) Interface of anodic sulfide-oxide on n-type InSb
002915 (1991)
002916 (1990) Transport properties in δ-doping of InP
002929 (1990) High carrier concentration in InP by Si+ and P+ dual implantations
002947 (1989) Improved activation in Si+ and P+ dually implanted InP
002955 (1988) Magnetoplasmon-phonon coupling in a GaxIn1-xAs heterostructure
002964 (1987) Open tube Zn diffusion using In/Zn sources and its application in quasi-planar InP/InGaAsP HBT's
002989 (1985) Infrared reflectance study of n-type InP grown by the LEC method

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