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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Carrier mobility »
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Carrier lifetime < Carrier mobility < Carrier relaxation time  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 61.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000080 (2013) The effect of secondary electrons on emission
000147 (2013) Physical Mechanism of Surface Roughening of the Radial Ge-Core/Si-Shell Nanowire Heterostructure and Thermodynamic Prediction of Surface Stability of the InAs-Core/GaAs-Shell Nanowire Structure
000213 (2013) InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy
000240 (2013) H2 annealing effect on the structural and electrical properties of amorphous InGaZnO films for thin film transistors
000269 (2013) Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy
000317 (2013) Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors
000324 (2013) Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy
000372 (2012) The effects of tris(2-phenylpyridine) iridium on the hole injection and transport properties of 4,4',4"-tri(N-carbazolyl)-triphenylamine thin films
000419 (2012) Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures
000485 (2012) Interfacial Charge Carrier Dynamics of the Three-Component In2O3-TiO2-Pt Heterojunction System
000548 (2012) Enhanced doping efficiency of the remotely p-doped InAs/InP core-shell nanowires: A first principles study
000902 (2011) Effects of Annealing on Structural and Electrical Properties of CulnSe2 Thin Films Prepared by Hybrid Sputtering/Evaporation Processes
000A16 (2010) Synthesis and thermoelectric properties of p-type Zn-doped ZnxIn1-xSb compounds
000A52 (2010) Room temperature Er3+ 1.54 μm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering
000A75 (2010) Performance of InSnZrO as transparent conductive oxides
000E02 (2009) Multi-carrier transport properties in p-type ZnO thin films
000F05 (2009) Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique
000F12 (2009) Direct observation of single InAs/GaAs quantum dot spectrum without mesa or mask
000F62 (2009) A study of two-step growth and properties of In0.82Ga0.18As on InP
000F90 (2008) Tungsten-doped In2O3 transparent conductive films with high transmittance in near-infrared region
001001 (2008) The effects of In isoelectronic substitution for Ga on the thermoelectric properties of SrgGa16-xInxGe30 type-I clathrates

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