Serveur d'exploration sur l'Indium - Analysis (Chine)

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List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
001005 (2008) The defect density of a SiNx /In0.53Ga0.47As interface passivated using (NH4)2Sx
001083 (2008) Nitrogen Incorporation Characteristics of 4H-SiC Epitaxial Layer
001415 (2007) Energy band alignment of an In2O3: Mo/Si heterostructure
001496 (2007) "Positive" and "negative" electric-pulse-induced reversible resistance switching effect in Pr0.7Ca0.3MnO3 films
001C29 (2003) Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots
001C35 (2003) Capacitance-voltage spectroscopy of In0.5Ga0.5As self-assembled quantum dots in double quantum wells under selective photo-excitation
002576 (1996-02-15) A proposal for determination of band offset at a semiconductor heterojunction
002654 (1995-07-01) Experimental study on the Er/p-InP Schottky barrier
002655 (1995-07-01) A double metal structure Pt/Al/n-InP diode
002667 (1995-05-08) Molecular beam epitaxy regrowth using a thin In layer for surface passivation
002669 (1995-05) Sulfide-assisted reordering at the InP surface and SiNx/InP interface
002682 (1995-02-15) Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs
002735 (1994-12-15) Hole subband in p-type channel of semiconductor heterostructures
002740 (1994-10-15) Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition
002742 (1994-09-15) Proposal of interband tunneling structures with strained layers
002746 (1994-09-01) Flat band current-voltage-temperature method for band-discontinuity determination and its application to strained InxGa1-xAs/In0.52Al0.48As heterostructures

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