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Aluminium phosphide < Aluminium phosphides < Aluminum alloys  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
001537 (2006) Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition
001979 (2004) Nonlinearity in power-current characteristics of narrow-pulse-driven AlGaInP laser diodes
001A30 (2004) Determination of the effective refractive index spectrum of a quantum-well semiconductor laser diode from the measured modal gain spectrum
001B39 (2003) Study on the surface of AlGaInP
001C45 (2003) Accurate interband-energy measurements from Ellipsometric spectra
001D99 (2002) Analysis of the Al content in semiconductor materials by null ellipsometric spectrometry
001E82 (2001) The vertical beam quality of GaInP/AlGaInP strained multiple quantum well laser
001F63 (2001) Demonstrations for optical beam qualities of quantum well lasers
001F64 (2001) Damage profiles and damage annealing behavior in Al0.168Ga0.348In0.484P/GaAs implanted with 200 keV Zn+ ions
002072 (2000) Relaxation mechanism of GaP/InGaAlP/GaAs heterostructure
002138 (2000) Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks
002243 (1999) Room temperature continuous wave visible vertical cavity surface emitting laser
002385 (1998) Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-z/GaAs with direct band gap up to 2.0 eV
002724 (1995) Effect of V/III ratio on the electrical and optical properties of Si-doped AlGaInP grown by metalorganic chemical vapor deposition
002744 (1994-09-05) Magnesium doping of InGaAlP grown by low-pressure metalorganic chemical vapor deposition
002745 (1994-09-01) Window layer for current spreading in AlGaInP light-emitting diode
002766 (1994-04-15) Valence-band offsets and band tailoring in compound strained-layer superlattices
002797 (1994) High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy

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