Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « ZHICHUAN NIU »
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ZHICHU BI < ZHICHUAN NIU < ZHIDAN FANG  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
000908 (2011) Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy
001036 (2008) Spectroscopy of long wavelength coupled quantum dots
001360 (2007) MBE growth of very short period InAs/GaSb type-II superlattices on (0 0 1)GaAs substrates
001397 (2007) Fabrication of ultra-low density and long-wavelength emission InAs quantum dots
001518 (2006) The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content
001F23 (2001) Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0≤x≤0.3) layer

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Photoluminescence
5Indium arsenides
4Atomic force microscopy
4Gallium arsenides
4Molecular beam epitaxy
4Quantum dots
3III-V semiconductors
2Composition effect
2Experimental study
2Nanostructured materials
2Transmission electron microscopy
1Activation energy
1Antimony additions
1Binary compounds
1Buffer layer
1Crystal growth from vapors
1Epitaxial layers
1Gallium Arsenides
1Gallium antimonides
1III-V compound
1Impurity density
1Indium Arsenides
1Integrated intensity
1Interfaces
1Interfacial layer
1Ion irradiation
1Island structure
1Multiple quantum well
1Operating conditions
1Photon-electron interactions
1Potential barrier
1Quaternary compounds
1RHEED
1Radiation effects
1Raman spectra
1Self organization
1Self-assembled layers
1Semiconductor materials
1Size effect
1Smooth surface
1Solid source molecular beam epitaxy
1Spectral line shift
1Spectral shift
1Strained layer
1Superlattices
1TEM
1Temperature dependence
1Temperature effects
1Ternary compounds
1Thickness

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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   |clé=    ZHICHUAN NIU
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