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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Z. X. Qin »
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Z. X. Mei < Z. X. Qin < Z. X. Zhang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
001262 (2007) The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
001947 (2004) Study of photoluminescence and absorption in phase-separation InGaN films
001971 (2004) Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off
001B89 (2003) InGaN/GaN MQW high brightness LED grown by MOCVD

List of associated KwdEn.i

Nombre de
documents		Descripteur
3Gallium nitrides
3Indium nitrides
3Photoluminescence
2Cathodoluminescence
2Inorganic compounds
2MOCVD
2Multiple quantum well
2Quantum dots
2Semiconductor materials
2Spectral line shift
2Ternary compounds
2XRD
1Absorption spectra
1Annealing
1Backscattering
1Binary compound
1Chemical composition
1Composition effect
1Compressive stress
1Deep level
1Electroluminescence
1Excitation spectrum
1Experimental study
1Fabrication property relation
1Gallium nitride
1III-V compound
1III-V semiconductors
1Inclusions
1Indium nitride
1Lift off
1Light emitting diode
1Light emitting diodes
1Luminescence
1MOVPE method
1Microelectronic fabrication
1Microstructure
1Nanostructured materials
1Nitrides
1Optical microscopy
1Optoelectronic device
1Optoelectronic devices
1Phase separation
1Piezoelectric materials
1Quantum dot
1RBS
1Radiative recombination
1Raman spectra
1Size effect
1Stokes shift
1Strained layer
1Temperature effect
1Ternary compound
1Thickness
1Urbach rule
1Wafers
1X ray diffraction

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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