Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Z. P. Zhu »
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Z. P. Yang < Z. P. Zhu < Z. Pan  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
001648 (2006) Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
001C88 (2002-04-29) Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements
001E29 (2001-09-17) Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
001E37 (2001-08-27) Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

List of associated KwdEn.i

Nombre de
documents
Descripteur
4Experimental study
4Gallium arsenides
4III-V semiconductors
3Aluminium compounds
3High electron mobility transistors
3Indium compounds
2Hall effect
2Interface states
2Shubnikov-de Haas effect
1Antisite defects
1Carrier mobility
1Conduction bands
1Crystal growth from melts
1Electron density
1Electron spin polarization
1Indium arsenides
1Molecular beam epitaxy
1Phonon-plasmon interactions
1Pressure effects
1Raman spectra
1Rapid thermal annealing
1Temperature dependence
1Ternary compounds
1Thin films
1Two-dimensional electron gas

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   |clé=    Z. P. Zhu
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