Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Z. C. Feng »
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Z. Bo < Z. C. Feng < Z. C. Huang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000784 (2011) Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation
001331 (2007) Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition
001537 (2006) Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition
001571 (2006) Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
001684 (2006) Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing

List of associated KwdEn.i

Nombre de
documents
Descripteur
5Photoluminescence
4MOCVD
3Crystal growth from vapors
3Experimental study
3III-V semiconductors
2Activation energy
2CVD
2Chemical composition
2Light emitting diode
2Microelectronic fabrication
2Multiple quantum well
2Raman scattering
2Temperature effect
2Thin films
1Aluminium phosphides
1Atomic force microscopy
1Band structure
1Blende structure
1Blue shift
1Blueshift
1Buffer layer
1Charge carrier density
1Coatings
1Cracks
1Dielectric thin films
1Dislocations
1Doped materials
1Durability
1Electrical characteristic
1Epitaxial layers
1Exciton
1Fluctuations
1Free carrier
1GSMBE method
1Gallium arsenides
1Gallium nitrides
1Gallium phosphides
1High resolution
1High temperature
1Indium arsenides
1Indium nitrides
1Indium phosphides
1Low-power electronics
1Microstructure
1Molecular beam epitaxy
1Morphological analysis
1Morphology
1Nanostructured materials
1Nucleation
1Optical characteristic
1Optical measurement
1Optical microscopy
1Optoelectronic device
1Phase separation
1Properties of materials
1Quaternary compounds
1Radiative recombination
1Rapid thermal annealing
1Redshift
1Reliability
1Rutherford backscattering
1S shape
1Secondary ion mass spectra
1Structural analysis
1Temperature dependence
1Ternary compounds
1Thermal behavior
1Time resolution
1Transmission electron microscopy
1Ultraviolet radiation
1Vacancies
1X ray diffraction
1XRD

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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