Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « YIPING ZENG »
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YIPING LIAO < YIPING ZENG < YIPING ZHAO  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000479 (2012) Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer
000B35 (2010) Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, 10-tetracarboxylic dianhydride as hole injection layer
001122 (2008) Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching
001440 (2007) Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
001813 (2005) Growth and characterization of InN on sapphire substrate by RF-MBE
001E79 (2001) Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure
001F14 (2001) Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer
001F41 (2001) High-quality metamorphic HEMT grown on GaAs substrates by MBE
002346 (1998) Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(0 0 1) substrate measured by a series of symmetric double crystal X-ray diffraction
002413 (1998) Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE

List of associated KwdEn.i

Nombre de
documents
Descripteur
5Indium arsenides
4Binary compounds
4Experimental study
4Molecular beam epitaxy
4Photoluminescence
3Aluminium arsenides
3Atomic force microscopy
3Doping
3Gallium arsenides
3III-V semiconductors
3Performance evaluation
3Planar doping
3Ternary compound
3XRD
2Buffer layer
2Crystal growth from vapors
2High electron mobility transistor
2Indium nitrides
2Indium oxide
2Light emitting diode
2Lithium fluoride
2MOCVD
2Microelectronic fabrication
2Molybdenum oxide
2Organic light emitting diodes
2Semiconductor materials
2Thin films
1Aluminium complex
1Aluminium compound
1Aluminium oxide
1Anisotropy
1Annealing
1Binary compound
1Cadmium
1Charge transfer
1Charge transfer compound
1Copper complex
1Cut off frequency
1Dislocation motion
1Doped materials
1Driving voltage
1Electrical characteristic
1Electron density
1Electron mobility
1Epitaxial layers
1Gallium nitride
1Gallium nitrides
1Growth mechanism
1Growth rate
1Hall effect
1Heteroepitaxy
1Heterojunctions
1High electron mobility transistors
1High power
1Hole injection layer
1III-V compound
1Indium additions
1Indium nitride
1Inductively coupled plasma
1Injection current
1Inorganic compounds
1Laser induced fluorescence
1Lattice distortion
1Lifetime
1Low voltage
1Luminance
1Magnesium additions
1Metallophthalocyanine
1Metamorphic transistor
1Misfit dislocations
1Mismatch lattice
1Molybdenum
1Morphology
1Multiple quantum well
1Nitrides
1Optimization
1Optoelectronic device
1Organic anhydride
1Organic electronics
1Output power
1Planar technology
1Plasma assisted processing
1Plasma etching
1Pseudomorphic transistor
1Quinoline derivatives
1RBS
1RHEED
1Radiofrequency
1Shubnikov de Haas effect
1Silicon additions
1Smooth surface
1Strain tensor
1Stress relaxation
1Surface morphology
1Surfaces
1Temperature effects
1Ternary compounds
1Tin addition
1Tin oxide
1Transconductance

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