Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. Z. Tong »
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Y. Z. Sun < Y. Z. Tong < Y. Z. Wang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
001262 (2007) The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
001947 (2004) Study of photoluminescence and absorption in phase-separation InGaN films
001A45 (2004) An approach to determine the chemical composition in InGaN/GaN multiple quantum wells
001B89 (2003) InGaN/GaN MQW high brightness LED grown by MOCVD
002406 (1998) Growth and doping characteristics of InGaN films grown by low pressure MOCVD

List of associated KwdEn.i

Nombre de
documents
Descripteur
4Gallium nitrides
4Indium nitrides
3Experimental study
3MOCVD
3Multiple quantum well
3Photoluminescence
3Ternary compounds
3XRD
2Cathodoluminescence
2Chemical composition
2III-V semiconductors
2Quantum dots
2RBS
2Semiconductor materials
2Thickness
1Absorption spectra
1Backscattering
1Binary compound
1Binary compounds
1Composition effect
1Deep level
1Digital simulation
1Doped materials
1Electroluminescence
1Excitation spectrum
1Fabrication property relation
1Gallium nitride
1III-V compound
1Inclusions
1Indium nitride
1Inorganic compounds
1Lattice parameters
1Light emitting diode
1Light emitting diodes
1MOVPE method
1Microelectronic fabrication
1Microstructure
1Nanostructured materials
1Nitrides
1Optical microscopy
1Optoelectronic device
1Optoelectronic devices
1Phase separation
1Piezoelectric materials
1Quantum dot
1Radiative recombination
1Silicon additions
1Size effect
1Spectral line shift
1Stokes shift
1Temperature effect
1Ternary compound
1Thin films
1Urbach rule
1Vegard law
1Wafers
1X ray diffraction
1Zinc additions

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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