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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Y. T. Wang »
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Y. T. Tao < Y. T. Wang < Y. T. Yin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000C83 (2009) The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
000D17 (2009) Suppression of indium droplet formation by adding CC14 during metalorganic chemical vapor deposition growth of InN films
000E16 (2009) Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
001030 (2008) Structural characterization of Mn implanted AlInN
001065 (2008) Photoelectric characteristics of metal/InGaN/GaN heterojunction structure
001110 (2008) Investigation on the structural origin of n-type conductivity in InN films
001497 (2006) Electrophoretic ink using urea-formaldehyde microspheres
001636 (2006) Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition
001728 (2005) Study on the thermal stability of InN by in-situ laser reflectance system
001783 (2005) Low-temperature growth of InN by MOCVD and its characterization
001872 (2004-06-28) Investigations on V-defects in quaternary AlInGaN epilayers
001951 (2004) Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
001996 (2004) Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers
001A25 (2004) Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells
001A26 (2004) Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells
001D84 (2002) Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping
002115 (2000) Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
002734 (1994-12-26) Surface scattering of x rays from InP (001) wafers
002741 (1994-10-01) Determination of surface roughness of InP (001) wafers by x-ray scattering

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Experimental study
10XRD
9MOCVD
8III-V semiconductors
7Indium nitrides
7Thin films
6Crystal growth from vapors
6Photoluminescence
5Atomic force microscopy
5CVD
5Gallium nitrides
5Indium nitride
4Binary compounds
3Interfaces
3Morphology
3Reflectivity
3Roughness
3Temperature effects
2Activation energy
2Adatoms
2Aluminium nitrides
2Carrier density
2Cathodoluminescence
2Droplets
2Edge dislocations
2Epitaxial layers
2Gallium nitride
2Growth mechanism
2Growth rate
2Hall effect
2Indium phosphides
2Island structure
2Microstructure
2Multiple quantum well
2Optical properties
2Quaternary compounds
2Scattering
2Semiconductor materials
2Surface diffusion
2Surface structure
2Temperature dependence
2Ternary compounds
1Aluminium Indium Nitrides Mixed
1Aluminium compounds
1Angular variation
1Annealing
1Buffer layer
1Carrier mobility
1Characterization
1Chemical composition
1Chemical polishing
1Close packing
1Coalescence
1Crystal defects
1Crystal doping
1Crystal perfection
1Cubic lattices
1Density
1Desorption
1Diffusion
1Dislocation density
1Dislocations
1Donor center
1Doped materials
1EBIC
1Electric field effects
1Electroluminescence
1Electrophoresis
1Electrophoretic mobility
1Etching
1Fluctuations
1Formaldehyde
1Gallium arsenides
1Gallium compounds
1Heterostructures
1Hexagonal lattices
1High temperature
1In situ
1Indium
1Indium additions
1Indium arsenides
1Indium compounds
1Inorganic compounds
1Interdiffusion
1Ion implantation
1Iron additions
1Isothermal annealing
1Kinetics
1Lamellar structure
1Lasers
1Lateral growth
1Lattice relaxation
1Localized states
1MOVPE method
1Manganese additions
1Mechanical polishing
1Metal-semiconductor contacts
1Microsphere
1Molecular beam epitaxy
1Monocrystals

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