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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « XIAOHUI WANG »
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XIAOHUI MA < XIAOHUI WANG < XIAOHUI YU  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
001952 (2004) Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition
001A29 (2004) Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure
001A34 (2004) Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition
001B43 (2003) Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
001B46 (2003) Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate
001D18 (2002) The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method
001D19 (2002) The mechanism of blueshift in excitation-intensity-dependent photoluminescence spectrum of nitride multiple quantum wells
001D37 (2002) Statistical investigation on morphology development of gallium nitride in initial growth stage
001E10 (2002) A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition
001F32 (2001) Indium doping effect on GaN in the initial growth stage
002095 (2000) In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Gallium nitrides
10Experimental study
9Crystal growth from vapors
8Indium nitrides
7III-V semiconductors
6Low pressure
6Photoluminescence
6Thin films
5CVD
5Characterization
5Quantum dots
4Low temperature
4MOCVD
4MOVPE method
4Morphology
4Passivation
4VPE
3Aluminium nitrides
3Crystal doping
3Crystal perfection
3Indium additions
3Multilayers
3Surfaces
3Ternary compounds
2Atomic force microscopy
2Binary compounds
2Buffer layer
2Carrier mobility
2Growth mechanism
2Nanostructures
2Roughness
2Semiconductor materials
1Activation energy
1Band structure
1Carrier density
1Charge carriers
1Charge transfer
1Crystal nucleation
1Dimension spectrum
1Dislocations
1Electron-defect interactions
1Energy barrier
1Energy dispersive spectroscopy
1Excitation intensity
1Excitons
1Heterojunctions
1Heterostructures
1IV characteristic
1Impurity effect
1In situ
1Localized exciton
1Localized states
1Monocrystals
1Multiple quantum well
1Multistep method
1Nanostructured materials
1Optical microscopy
1Poisson equation
1Potential well
1Quantity ratio
1Quaternary compounds
1RBS
1Radiative recombination
1Schroedinger equation
1Self consistency
1Spectral line shift
1Square-well potential
1Stacking sequence
1Statistical analysis
1Stress relaxation
1Subband
1Superlattices
1Surface diffusion
1Surface treatments
1Temperature dependence
1Thermal annealing
1Thermal stresses
1Thick films
1Two-dimensional electron gas
1Wave functions
1Wetting
1XRD

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