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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « XIA LIU »
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XIA GUO < XIA LIU < XIA MENG  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
000805 (2011) Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
000808 (2011) Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
000907 (2011) Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method
000C01 (2010) Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Buffer layer
4Hall effect
4MOCVD
4XRD
3Epitaxial layers
2Atomic force microscopy
2Gallium Indium Arsenides Mixed
2Low pressure
2Photoluminescence
2Scanning electron microscopy
1Annealing
1Film growth
1Gallium arsenides
1Growth mechanism
1Heat treatments
1III-V compound
1III-V semiconductors
1Indium arsenides
1Indium phosphide
1Inorganic compounds
1Mismatch lattice
1Raman scattering
1Raman spectra
1Recrystallization
1Scanning force microscopy
1Semiconductor materials
1Surface morphology
1Surface structure
1Thermal annealing
1Thickness
1Transmission electron microscopy

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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