X. L. Xu < X. L. Ye < X. L. Z

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 31.
[0-20] [0 - 20][0 - 31][20-30][20-40]

Ident.	Authors (with country if any)	Title
000A05 (2010)		Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density
000B16 (2010)		Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
000C08 (2010)		Different growth mechanisms of bimodal InAs/GaAs QDs
000C34 (2010)		Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density
000F52 (2009)		Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates
000F53 (2009)		Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition
001094 (2008)		Mn-including InAs quantum dots fabricated by Mn implantation
001484 (2007)		Anomalous photoluminescence of InAs quantum dots implanted by Mn ions
001621 (2006)		Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
001658 (2006)		Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
001711 (2005)		The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots
001791 (2005)		Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001832 (2005)		Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001)
001923 (2004)		Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy
001A07 (2004)		Growth of nanostructures on composition-modulated InAlAs surfaces
001B29 (2003)		The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
001C46 (2003)		Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
001D34 (2002)		Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
001D85 (2002)		Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
001D88 (2002)		Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm
001E08 (2002)		A novel application to quantum dot materials to the active region of superluminescent diodes

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List of associated KwdEn.i

Nombre de documents	Descripteur
30	Indium arsenides
28	Photoluminescence
27	Quantum dots
20	Gallium arsenides
19	Experimental study
18	III-V semiconductors
15	Molecular beam epitaxy
10	Atomic force microscopy
10	Crystal growth from vapors
9	Aluminium arsenides
9	Nanostructured materials
9	Temperature dependence
7	Binary compounds
7	Nanostructures
7	Self-assembly
7	Semiconductor materials
6	Self assembly
6	Temperature effects
6	Thickness
6	Thin films
5	Buffer layer
5	III-V compound
5	Morphology
5	Rapid thermal annealing
5	Self-assembled layers
5	Size effect
5	Ternary compounds
4	Growth mechanism
4	Interdiffusion
4	MOCVD
4	Multilayers
4	Optical properties
4	Spectral line shift
4	Transmission electron microscopy
3	Characterization
3	Fabrication property relation
3	High density
3	Island structure
3	Microstructure
2	Annealing
2	Blue shift
2	Defects
2	Epitaxial layers
2	Growth rate
2	Heteroepitaxy
2	Heterojunctions
2	Indium phosphides
2	Inorganic compounds
2	Integrated intensity
2	Ion implantation
2	Line widths
2	Manganese additions
2	Quantum system
2	Quantum wires
2	RHEED
2	Self organization
2	Solid source molecular beam epitaxy
2	Stress relaxation
2	Surface structure
2	Surfaces
2	TEM
1	Absorption spectroscopy
1	Active region
1	Alignment
1	Annealing temperature
1	Anomaly
1	Atom migration
1	Atomic layer method
1	Bilayers
1	Binary compound
1	CVD
1	Cesium
1	Charge carrier trapping
1	Confinement
1	Continuum
1	Critical value
1	Crystal growth
1	Crystal orientation
1	Dark conductivity
1	Density
1	Deposition rate
1	Diffusion
1	Dimension spectrum
1	Dimensions
1	Dislocations
1	Dispersive spectrometry
1	Distribution functions
1	Doping
1	Electrical properties
1	Energy gap
1	Epitaxy
1	Excitons
1	Ferromagnetic materials
1	Ferromagnetism
1	Film growth
1	Finite size effect
1	Impurity diffusion
1	In situ
1	Indium
1	Indium compounds

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