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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « W. C. Hsu »
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W. C. Chuang < W. C. Hsu < W. C. Huang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
002017 (2000-05-22) In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors
002156 (1999-11-29) Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer
002169 (1999-09-13) High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor
002323 (1998-05) Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers
002558 (1996-08-15) Photoinduced electron coupling in δ-doped GaAs/In0.18Ga0.82As quantum wells
002663 (1995-05-22) Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor
002679 (1995-03) Characteristics of δ -doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors
002684 (1995-02-06) Very strong negative differential resistance real-space transfer transistor using a multiple δ-doping GaAs/InGaAs pseudomorphic heterostructure
002688 (1995-01-16) A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base
002762 (1994-05-30) Mobility enhancement in double δ-doped GaAs/InxGa1-xAs/GaAs pseudomorphic structures by grading the heterointerfaces
002772 (1994-01-01) Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice
002773 (1994-01) Influences of δ -doping time and spacer thickness on the mobility and two-dimensional electron gas concentration in δ -doped GaAs/InGaAs/GaAs pseudomorphic heterostructures

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Experimental study
10Gallium arsenides
7CVD
7Indium arsenides
6Doped materials
5Heterostructures
4III-V semiconductors
4Indium compounds
4Ternary compounds
3Carrier mobility
3Electron mobility
3Gallium compounds
3Quantum wells
3SIMS
2Aluminium compounds
2Conduction bands
2Electron density
2Energy gap
2Field effect transistors
2High electron mobility transistors
2IV characteristic
2Semiconductor growth
1Bipolar transistors
1Breakdown
1Crystal doping
1Design
1Electric breakdown
1Electrical properties
1Electron gas
1Electron-electron coupling
1Fabrication
1Heterojunction bipolar transistors
1Heterojunctions
1Indium phosphides
1Instrumentation
1Interface states
1Interface structure
1Junction transistors
1Leakage current
1Leakage currents
1MOCVD
1MOCVD coatings
1Magnetoresistance
1Performance
1Photoconductivity
1Photoluminescence
1Schottky barriers
1Semiconductor heterojunctions
1Shubnikov-de Haas effect
1Silicon additions
1Superlattices
1Surface recombination
1Switching
1Temperature range 65-273 K
1Transistors
1semiconductor device breakdown

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