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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « T. H. Wang »
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T. H. Liu < T. H. Wang < T. Hasegawa  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
001A99 (2003-05-05) Characteristics of a field-effect transistor with stacked InAs quantum dots
001D72 (2002) Formation and charge control of a quantum dot by etched trenches and multiple gates
001E45 (2001-06-04) Etching trenches to effectively create electron quantum wires for single-electron-transistor applications
001F36 (2001) Hysteresis in electronic transport through an ensemble of InAs self-assembled quantum dots
001F37 (2001) Hysteresis in current transport in a GaAs diode containing self-assembled InAs quantum dots

List of associated KwdEn.i

Nombre de
documents		Descripteur
3Gallium arsenides
3Indium arsenides
3Single electron transistors
2Binary compound
2Charge carrier trapping
2Experimental study
2III-V semiconductors
2Indium compounds
2Poisson equation
2Quantum dot
2Tunnel effect
2Two-dimensional electron gas
1Aluminium arsenides
1Aluminium compounds
1Band structure
1Coulomb blockade
1Diode
1Electrical characteristic
1Electron density
1Electronic conductivity
1Etching
1Hysteresis
1Hysteresis loop
1IV characteristic
1Junction gate field effect transistors
1MSM structure
1Metal-semiconductor-metal structures
1Quantum dots
1Schroedinger equation
1Schrödinger equation
1Self assembly
1Self consistency
1Self-assembled layers
1Semiconductor quantum dots
1Semiconductor quantum wires
1Ternary compound
1Theoretical study
1Transport processes
1Trench technology
1Voltage current curve

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