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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « SHIYONG LIU »
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SHIYONG HUANG < SHIYONG LIU < SHIYONG ZHANG  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000224 (2013) Improved performances of organic light-emitting diodes with mixed layer and metal oxide as anode buffer
001412 (2007) Enhanced current efficiency in organic light-emitting devices using 4,4'-N, N' -dicarbazole-biphenyl as hole-buffer layer
001434 (2007) Efficient white organic light-emitting devices using 4,7-diphenyl-1,10-phenanthroline as block layer
001498 (2006) White organic light-emitting devices with non-doped-type structure
001619 (2006) High efficiency small molecule white organic light-emitting devices with a multilayer structure
001957 (2004) Small molecular white organic light emitting devices with a single emission layer
001C28 (2003) Degradation of organic light-emitting devices under different driving model
001C38 (2003) Blue and white organic light-emitting diodes based on 4,4'-bis(2,2' diphenyl vinyl)-1,1'-biphenyl
001C44 (2003) An efficient and bright organic white-light-emitting device
001C52 (2003) A nondoped-type small molecule white organic light-emitting device
001F62 (2001) Design of the active structure of high-performance 1.55-μm In1-x-yGayAlxAs strained MQW lasers
002119 (2000) Effect of thin GaAs tensile-strained layer on InAs quantum dots on InP (001) substrate grown by LP-MOVPE
002213 (1999) Using the tensile stress field to control quantum dot arrangements
002281 (1999) Efficient white light-emitting organic/polymeric electroluminescent device
002357 (1998) Spontaneously ordered InAs self-assembled quantum dots grown on GaAs/InP substrate
002367 (1998) Photoluminescence of InAs self-organized quantum dots formation on InP substrate by MOCVD
002427 (1998) Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers
002717 (1995) Growth of GaAs-InP heteromaterials and corresponding strain determination
002728 (1995) Characterization of InxGa1-xAs/InP epilayers by X-ray double crystal rocking curve peak profile analysis

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
7Indium arsenides
6Gallium arsenides
6Indium oxide
5Binary compounds
5Chromaticity
5Indium phosphides
5Light emitting diode
5Performance evaluation
5White light
4Light emitting device
4Quantum dots
3Chemical composition
3Electroluminescent device
3Luminance
3Organic compounds
3Semiconductor materials
3Tensile stress
3Theoretical study
3Thickness
3Thin films
3Tin addition
3Tin oxide
2Aluminium complex
2Aluminium compound
2Anode
2Atomic force microscopy
2Band structure
2Brightness
2Buffer layer
2Charge carrier injection
2Doped materials
2Epitaxial layers
2Hole
2III-V semiconductors
2Island structure
2Lithium fluoride
2Multiple quantum well
2Photoluminescence
2Quaternary compounds
2Quinoline derivatives
2Semiconductor lasers
2Strained quantum well
2Ternary compounds
2Threshold current
2XRD
1Adsorption site
1Aluminium
1Aluminium arsenides
1Anthracene
1Aromatic compound
1Biphenyl derivatives
1Blocking layer
1Blue light
1Buffer system
1Cathode
1Characterization
1Charge carrier mobility
1Coefficient of expansion
1Color
1Compressive stress
1Conversion rate
1Copper complex
1Crystal growth from vapors
1Crystal nucleation
1Current density
1Degradation
1Density of states
1Diffraction pattern analysis
1Dimensionality
1Doping
1Durability
1Electroluminescence
1Electron injection
1Electronic structure
1Emission spectrum
1Epitaxy
1Experimental result
1Gain
1Gallium phosphides
1Growth mechanism
1Heterojunction
1Heterojunctions
1Hole mobility
1III-V compound
1Infrared laser
1Infrared radiation
1Light emission
1Low pressure
1MOCVD
1MOVPE method
1Manufacturing process
1Metallophthalocyanine
1Microstructure
1Mismatch lattice
1Molybdenum
1Multiple layer
1Optical properties
1Optimization method
1Organic dye

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