Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « SHENGDONG ZHANG »
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SHENGCHUN QU < SHENGDONG ZHANG < SHENGHAO HAN  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 3.
Ident.Authors (with country if any)Title
000048 (2013) a-IGZO TFTs With Inductively Coupled Plasma Chemical Vapor Deposited SiOx Gate Dielectric
000287 (2013) Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs
000310 (2013) Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films

List of associated KwdEn.i

Nombre de
documents
Descripteur
2Amorphous material
2Gallium oxide
2Indium oxide
2Microelectronic fabrication
2Sputter deposition
2Thin film transistor
2Zinc oxide
1Atomic force microscopy
1Carrier density
1Cathode sputtering
1Chemical vapor deposition
1Conduction bands
1Electric stress
1Electrical characteristic
1Electrical conductivity
1Electrical properties
1Electronic properties
1Electronic structure
1Energy gap
1Fermi level
1Flat panel displays
1Gallium
1Gallium Indium Zinc Oxides Mixed
1High performance
1Induced voltage
1Inductively coupled plasma
1Low temperature
1On off effect
1Optical properties
1Optimal flow
1Oxygen
1PECVD
1Radiofrequency sputtering
1Refractive index
1Scanning electron microscopy
1Semiconductor materials
1Silicon oxides
1Stoichiometry
1Stress effects
1Thin film transistors
1Thin films
1Ultraviolet photoelectron spectra
1Vacancies
1Vacancy
1Voltage threshold
1Work functions

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "SHENGDONG ZHANG" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "SHENGDONG ZHANG" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

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   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
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   |index=    Author.i
   |clé=    SHENGDONG ZHANG
}}

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