Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « S. Y. Tong »
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S. Y. Shen < S. Y. Tong < S. Y. Wang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
001800 (2005) In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
001A54 (2003-12-22) InN island shape and its dependence on growth condition of molecular-beam epitaxy
001A66 (2003-10-15) Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
001B86 (2003) Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
001E28 (2001-09-17) Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys

List of associated KwdEn.i

Nombre de
documents
Descripteur
4Experimental study
4III-V semiconductors
3Indium compounds
3Island structure
3Semiconductor epitaxial layers
2Gallium compounds
2Indium nitrides
2Molecular beam epitaxy
2Photoluminescence
2Wetting
2Wide band gap semiconductors
1Binary compounds
1Blende structure
1Carrier density
1Crystal structure
1Electron diffraction
1Excitation spectrum
1Excitons
1Free carrier
1Gallium nitrides
1Growth mechanism
1Internal field
1Localized states
1MOCVD coatings
1Multiple quantum well
1Nucleation
1Pressure effects
1Screening
1Semiconductor growth
1Spectral shift
1Stranski Krastanow growth
1Ternary compounds
1Transmission electron microscopy

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