Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « S. M. Wang »
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S. M. Sze < S. M. Wang < S. M. Zeng  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000012 (2014) Strain induced composition profile in InGaN/GaN core-shell nanowires
000242 (2013) Growth of metamorphic InGaP layers on GaAs substrates
000E08 (2009) Metamorphic InGaAs telecom lasers on GaAs
000E52 (2009) Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
001358 (2007) Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy
001359 (2007) Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm
001894 (2004-04-19) Deep-ultraviolet emission from an InGaAs semiconductor laser
002651 (1995-07-15) Observation of excitonic polariton and broadening of room-temperature exciton in strained InGaAs/GaAs quantum wells
002671 (1995-04-10) Photomodulated reflectance spectra of In0.2Ga0.8As/GaAs single quantum wells
002701 (1995) Room-temperature excitons in strained InGaAs/GaAs quantum wells
002738 (1994-11-21) Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells
002752 (1994-07-18) Influence of cap layer thickness on optical quality in In0.2Ga0.8As/GaAs single quantum wells
002789 (1994) Optical studies of strained InGaAs/GaAs single quantum wells
002796 (1994) Influence of the cap layer thickness on photoluminescence properties in strained INGaAs/GaAs single quantum wells

List of associated KwdEn.i

Nombre de
documents
Descripteur
11Gallium arsenides
10Indium arsenides
9Quantum wells
8Experimental study
6III-V semiconductors
6Photoluminescence
5Molecular beam epitaxy
4Absorption spectra
4Growth mechanism
4Ternary compounds
3Excitons
3Nanostructured materials
3Phonon-exciton interactions
3Strains
2Band structure
2Binary compounds
2Coatings
2Energy-level transitions
2Gallium Arsenides
2Heterostructures
2III-V compound
2Indium Arsenides
2Infrared spectra
2Internal strains
2Light emission
2Line widths
2Optical properties
2Quantum well lasers
2Roughness
2Segregation
2Semiconductor lasers
2Stress relaxation
2Threshold current
1Aluminium compounds
1Ambient temperature
1Bonding
1Buffer layer
1Concentration distribution
1Core shell structure
1Crystal growth from vapors
1Dislocations
1Electrical properties
1Electronic structure
1Epitaxial layers
1Epitaxy
1Experimental design
1Finite element method
1GSMBE method
1Gallium nitride
1Hexagonal shape
1IV characteristic
1Indium
1Indium compounds
1Indium nitride
1Interface roughness
1Laser cavity resonators
1Laser diodes
1Luminescence
1Misfit dislocations
1Modulation spectroscopy
1Monolayers
1Nanowires
1Nitrides
1Optical harmonic generation
1Optimization
1Phosphides
1Polaritons
1Quantum dots
1Quantum well
1Radiation effects
1Rapid thermal annealing
1Recombination
1Rectification
1Red shift
1Reflection spectroscopy
1Reflectivity
1Ridge waveguides
1Semiconductor doping
1Semiconductor materials
1Spectral line shift
1Strain energy
1Stress effects
1Stresses
1Surface states
1Temperature dependence
1Thermal annealing
1Threading dislocation
1Three dimensional model
1Transmission electron microscopy
1Triangular shape
1Ultraviolet spectra
1Waveguide lasers

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