Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « S. L. Lu »
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S. L. Lou < S. L. Lu < S. L. Qi  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000075 (2013) The investigation of GaInP solar cell grown by all-solid MBE
000123 (2013) Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells
000308 (2013) Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
001605 (2006) Influence of annealing on principal photovoltaic parameters of perylenetetracarboxylate/MEH-PPV solar cells
001B68 (2003) Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells

List of associated KwdEn.i

Nombre de
documents
Descripteur
3Photoluminescence
3Solar cell
2Annealing
2Gallium phosphide
2Growth mechanism
2Indium phosphide
2Photovoltaic cell
2Semiconductor materials
1Buffer layer
1Carboxylate
1Concentration effect
1Conversion rate
1Crystal perfection
1Defects
1Diffusion
1Dislocation density
1Distortion
1Electroluminescence
1Energetic efficiency
1Energy conversion
1Epitaxial layers
1Excitation spectrum
1Experimental study
1Gallium Arsenides nitrides
1Gallium arsenides
1Gallium compounds
1III-V semiconductors
1Illumination
1Indium arsenides
1Indium compounds
1Indium oxide
1MOCVD
1MOVPE method
1Mechanical properties
1Microstructure
1Molecular beam epitaxy
1Performance evaluation
1Perylene derivatives
1Phenylenevinylene derivative polymer
1Potential barrier
1Quantum wells
1Quantum yield
1Radiative recombination
1Room temperature
1Roughness
1Solar cells
1Spectral line shift
1Stress relaxation
1Surface morphology
1Tandem solar cell
1Temperature dependence
1Temperature effects
1Ternary compound
1Ternary compounds
1Thickness
1Threading dislocation
1Time dependence
1Tin addition
1Transmission electron microscopy
1p n junction

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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