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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Q. S. Zhu »
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Q. S. Zhang < Q. S. Zhu < Q. Sun  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
000C37 (2010) A study of indium incorporation in In-rich InGaN grown by MOVPE
001767 (2005) Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells
001782 (2005) Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates
002736 (1994-12-01) Deep center scattering potential in InGaP
002836 (1993) Field effect on thermal emission from the 0.40 eV electron level in InGaP
002860 (1992) Oxygen in InxGa1-xAsyP1-y Grown on GaAs

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Semiconductor materials
4Ternary compounds
3Experimental study
2DLTS
2Gallium nitrides
2Gallium phosphides
2Indium nitrides
2Indium phosphides
2Inorganic compounds
1Absorption spectra
1Activation energy
1Active layer
1Adatoms
1Aluminium nitrides
1Arrhenius equation
1Atomic force microscopy
1Band structure
1CVD
1Carrier mobility
1Charge carrier trapping
1Chemical composition
1Chromium
1Coulomb interaction
1Coulomb potential
1Deep energy levels
1Deep level
1Deep level transient spectrometry
1Defect level
1Density
1Depolarization
1Doped materials
1Doping
1Electric conductivity
1Electric field
1Electron-electron interactions
1Energy levels
1Excitons
1Film growth
1Gallium Indium Phosphides Mixed
1Gallium arsenides
1Gallium nitride
1Ground states
1Hall effect
1High field
1Impurity states
1Indium
1Indium arsenides
1Indium nitride
1Infrared spectra
1Inorganic compound
1Interband transitions
1LPE
1Light emitting diodes
1Low temperature
1Luminescence
1MOCVD
1MOVPE method
1Majority carrier
1Multilayers
1Multiple quantum well
1Oxygen additions
1Passivation
1Photoluminescence
1Poole Frenkel effect
1Potential well
1Quantum dots
1Quantum effect
1Quantum wells
1Quaternary compounds
1Scattering
1Self consistency
1Spectral line shift
1Spontaneous polarization
1Square well model
1Subband
1Surface barrier
1Temperature
1Temperature dependence
1Temperature effects
1Temperature range 273-400 K
1Temperature range 65-273 K
1Thermionic electron emission
1Tunnel effect

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EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "Q. S. Zhu" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "Q. S. Zhu" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

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