Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « JINMIN LI »
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JINLONG TAO < JINMIN LI < JINMING SONG  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000024 (2014) Improved performance of lateral GaN-based light emitting diodes with novel buried CBL structure in ITO film and reflective electrodes
000665 (2011) Theoretical study on InxGa1-xN/GaN quantum dots solar cell
000940 (2011) Behavioural investigation of InN nanodots by surface topographies and phase images
000948 (2011) An investigation on IXxGa1-xN/GaN multiple quantum well solar cells
000F96 (2008) Theoretical design and performance of InxGa1-xN two-junction solar cells
001122 (2008) Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching
001184 (2008) Effect of indium tin oxide (ITO) current spreading layer on the current uniformity of vertical structure GaN-based light-emitting diodes
001308 (2007) Simulation of In0.65Ga0.35 N single-junction solar cell
001326 (2007) Photovoltaic effects in InGaN structures with p-n junctions
001440 (2007) Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
001813 (2005) Growth and characterization of InN on sapphire substrate by RF-MBE
002241 (1999) Self-organization of the InGaAs/GaAs quantum dots superlattice

List of associated KwdEn.i

Nombre de
documents
Descripteur
5Gallium nitride
5Indium nitride
4III-V semiconductors
4Solar cell
3Atomic force microscopy
3Light emitting diode
3MOCVD
3Performance
3Thickness
3XRD
2Binary compound
2Binary compounds
2Crystal growth from vapors
2Doping
2Experimental study
2Gallium Indium Nitrides Mixed
2Growth mechanism
2III-V compound
2ITO layers
2Indium nitrides
2Molecular beam epitaxy
2Multiple quantum well
2Optoelectronic device
2Output power
2Performance evaluation
2Photoluminescence
2Short circuit currents
2Thin films
1Alignment
1Aluminium oxide
1Annealing
1Blocking layer
1Buffer layer
1Buried layer
1Charge carrier density
1Chemical bonds
1Chemical composition
1Current distribution
1Defects
1Diode
1Doped materials
1Droplets
1Energy gap
1Energy level
1Experimental result
1Gallium arsenides
1Gallium nitrides
1Growth rate
1Heterostructures
1High efficiency
1Illumination
1Indium
1Indium additions
1Indium arsenides
1Indium oxide
1Inductively coupled plasma
1Injection current
1Inorganic compounds
1Kronig Penney model
1Light absorption
1MOVPE method
1Magnesium additions
1Microelectronic fabrication
1Multilayers
1Nanodot
1Nanostructured materials
1Nitrides
1Oxide layer
1Photovoltaic effects
1Planar technology
1Plasma assisted processing
1Plasma etching
1Potential well
1Process control
1Quantum dot
1Quantum dots
1Quantum number
1Quantum theory
1Quantum well
1Quantum wells
1Quantum yield
1RBS
1RHEED
1Radiofrequency
1Reflective material
1Schottky barriers
1Schrödinger equation
1Self organization
1Series resistance
1Silicon additions
1Silicon oxides
1Structural analysis
1Superlattices
1Surface morphology
1Surface topography
1Ternary compound
1Ternary compounds
1Thermal annealing
1Thermal decomposition
1Thick film

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