Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « JIJUN QIU »
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JIHUAI WU < JIJUN QIU < JIJUN XIONG  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
001439 (2007) Effects of post-heat treatment on the characteristics of chalcopyrite CuInSe2 film deposited by successive ionic layer absorption and reaction method
001657 (2006) Effect of [Cu]/[In] ratio on properties of CuInS2 thin films prepared by successive ionic layer absorption and reaction method
001680 (2006) Characterization of CuInS2 thin films prepared by ion layer gas reaction method
001793 (2005) Influence of post-heat treatment on the properties of CuInS2 thin films deposited by an ion layer gas reaction (ILGAR)
001811 (2005) Growth mechanisms of CuSCN films electrodeposited on ITO in EDTA-chelated copper(II) and KSCN aqueous solution

List of associated KwdEn.i

Nombre de
documents
Descripteur
3Scanning electron microscopy
3Thin films
3X-ray photoelectron spectra
2Absorption spectra
2Copper sulfides
2Heat treatments
2Indium sulfides
2Inorganic compounds
2Optical absorption
2Preferred orientation
2Solar cell
2Transition element compounds
2XRD
1Absorption coefficient
1Activation energy
1Adhesion
1Alcoholic solution
1Ambient temperature
1Aqueous solution
1Chalcopyrite
1Chalcopyrite structure
1Chemical solution
1Copper II Complexes
1Copper Thiocyanates
1Copper selenides
1Copper sulfide
1EDTA
1Electrical conductivity
1Electrical properties
1Electrochemical reaction
1Electrodeposition
1Electronic properties
1Energy gap
1Experimental study
1Films
1Glass
1Growth mechanism
1Growth rate
1Hall effect
1Indium selenides
1Indium sulfide
1Indium tin oxide electrode
1Ions
1Microstructure
1Optical properties
1Stoichiometry
1Substrates
1Surface conditions
1Surface treatment
1Temperature
1Temperature dependence
1Ternary compounds
1Thermal annealing
1Thin film
1X ray diffraction

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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