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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « JIANXIN CHEN »
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JIANXIN CAO < JIANXIN CHEN < JIANXIN SHI  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000020 (2014) Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy
000217 (2013) InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy
001F48 (2001) GSMBE growth of InP-based MSM/HEMT OEIC structures
002104 (2000) Gas source molecular beam epitaxy of InP-based microstructures : material growth, characterization and device applications
002365 (1998) Photoluminescence study of InGaAs/InAlAs single and multiple quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Indium arsenides
3Aluminium arsenides
3Gallium arsenides
3Photoluminescence
2Current density
2Dark current
2Detectors
2Experimental study
2GSMBE method
2Growth mechanism
2III-V compound
2III-V semiconductors
2Interfaces
2Mismatch lattice
2Molecular beam epitaxy
2Superlattices
2Ternary compounds
2XRD
1Band structure
1Binary compounds
1Chemical etching
1Cyclotron resonance
1Diffusion
1Digital simulation
1Excitation intensity
1Focal plane arrays
1Gallium antimonides
1Heterostructures
1High electron mobility transistor
1Indium phosphides
1Integrated optoelectronics
1Interface properties
1Layer thickness
1Line widths
1Luminescence
1MSM structure
1Microelectronic fabrication
1Microstructure
1Modulation doping
1Optical properties
1Optimization
1Performance evaluation
1Photodetector
1Quantum Hall effect
1Quantum wells
1Quantum yield
1Recombination
1Residual impurity
1Roughness
1Semiconductor materials
1Shubnikov-de Haas effect
1Solid source molecular beam epitaxy
1Temperature dependence
1Ternary compound
1Transconductance
1Voltage threshold

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EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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