J. Wei < J. Wu < J. X. Chen

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]

Ident.	Authors (with country if any)	Title
000A51 (2010)		SELF-ASSEMBLING OF INAS QUANTUM DOTS ON GAAS(001) IN MOLECULAR BEAM EPITAXY
000C09 (2010)		Dielectric functions and the interband critical points of InAs0.05Sb0.95 film grown by a modified LPE technique
001092 (2008)		Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film
001165 (2008)		Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction
001594 (2006)		MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
001832 (2005)		Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001)
001923 (2004)		Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy
001998 (2004)		InAs nanostructure grown with different growth rate in InAlAs matrix on InP (001) substrate
001B33 (2003)		Synthesis and gas sensitivity of In-doped ZnO nanoparticles
001D59 (2002)		Interface magnetic properties of epitaxial Fe-InAs heterostructures
001E38 (2001-08-15)		Thermal redistribution of photocarriers between bimodal quantum dots
001F06 (2001)		Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
002058 (2000)		Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
002068 (2000)		Self-assembled InAs quantum wires on InP(001)
002115 (2000)		Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
002125 (2000)		Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots
002137 (2000)		Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
002267 (1999)		InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(0 0 1)
002274 (1999)		Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy
002341 (1998-01-19)		Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As/InP heterostructure
002391 (1998)		InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy

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List of associated KwdEn.i

Nombre de documents	Descripteur
21	Experimental study
18	Indium arsenides
16	Molecular beam epitaxy
14	Gallium arsenides
13	Photoluminescence
12	Quantum dots
11	III-V semiconductors
9	Crystal growth from vapors
8	Binary compounds
8	Semiconductor materials
8	TEM
7	Epitaxial layers
7	Ternary compounds
5	Aluminium arsenides
5	Thin films
4	Atomic force microscopy
4	Microstructure
4	Morphology
4	Multilayers
4	Superlattices
3	Chemical composition
3	Indium compounds
3	Nanostructured materials
3	Nanostructures
3	Optical properties
3	Quantum wires
3	Rapid thermal annealing
3	Self assembly
3	Semiconductor quantum dots
3	Thick films
3	Thickness
3	Transmission electron microscopy
2	Buffer layer
2	Crystal orientation
2	Doped materials
2	Growth mechanism
2	Heterostructures
2	III-V compound
2	Indium Arsenides
2	Indium additions
2	Interdiffusion
2	Interface structure
2	LPE
2	Misfit dislocations
2	Modulation
2	RHEED
2	Semiconductor superlattices
2	Size effect
2	Solid solutions
2	Stress relaxation
2	Temperature dependence
2	XRD
1	Absorption coefficients
1	Absorption spectroscopy
1	Alignment
1	Aluminium compounds
1	Annealing
1	Arsenic additions
1	Atomic layer method
1	Binary compound
1	Carrier density
1	Characterization
1	Chemical sensors
1	Codoping
1	Critical points
1	Crystal growth
1	Crystal growth habit
1	Crystal seeds
1	Crystal-phase transformations
1	Defects
1	Deformation
1	Dielectric function
1	Diffusion
1	Dimension spectrum
1	Dislocation structure
1	Dislocations
1	E1-transitions
1	E2-transitions
1	Edge dislocations
1	Elastic deformation
1	Electrical conductivity
1	Electroluminescence
1	Electron mobility
1	Emission spectroscopy
1	Energy-level splitting
1	Experiments
1	Fourier transform infrared spectroscopy
1	Fourier transform spectra
1	Gallium Arsenides
1	Gas detector
1	Growth rate
1	Heterojunctions
1	Hydrothermal growth
1	Hysteresis loop
1	II-VI semiconductors
1	Impurities
1	Indium antimonides
1	Infrared detector
1	Infrared spectra
1	Infrared spectrometers

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