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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « J. R. Yang »
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J. R. Sun < J. R. Yang < J. R. Zhang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
001331 (2007) Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition
001903 (2004-03-29) Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes
001B14 (2003-02-03) Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN
001B15 (2003-02-03) Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN

List of associated KwdEn.i

Nombre de
documents		Descripteur
3Experimental study
3Gallium compounds
3III-V semiconductors
3Indium compounds
3Semiconductor quantum wells
3Wide band gap semiconductors
2Scanning transmission electron microscopy
1Activation energy
1Cathodoluminescence
1Crystal faces
1Deconvolution
1Defect states
1Dislocation structure
1Dislocations
1Durability
1Electron backscattering
1High resolution
1Internal stresses
1Light emitting diode
1Light emitting diodes
1Low-power electronics
1MOCVD
1Microelectronic fabrication
1Multiple quantum well
1Optical characteristic
1Optical measurement
1Optoelectronic device
1Photoluminescence
1Quantum well lasers
1Reliability
1Scanning electron microscopy
1Secondary electron emission
1Smoothing methods
1Specimen preparation
1Structural analysis
1Temperature effect
1Time resolution
1Transmission electron microscopy
1X ray diffraction

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EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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