Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « J. R. Dong »
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J. R. Chang < J. R. Dong < J. R. Gong  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
000069 (2013) Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition
000123 (2013) Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells
000308 (2013) Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
002526 (1997) Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE

List of associated KwdEn.i

Nombre de
documents
Descripteur
2Buffer layer
2Dislocation density
2Epitaxial layers
2Gallium phosphide
2Growth mechanism
2Indium phosphide
2MOCVD
2Photoluminescence
2Semiconductor materials
2Threading dislocation
2Transmission electron microscopy
1Binary compounds
1Carrier mobility
1Concentration effect
1Crystal growth from vapors
1Crystal perfection
1Crystal structure
1Dislocations
1Distortion
1Electric conductivity
1Electroluminescence
1Experimental study
1Gallium
1Gallium compounds
1Hall effect device
1Heterojunctions
1III-V semiconductors
1Indium arsenides
1Indium compounds
1Layer thickness
1MOVPE method
1Mechanical properties
1Microstructure
1Misfit dislocations
1Molecular beam epitaxy
1Nucleation
1Phase separation
1Photovoltaic cell
1Potential barrier
1Radiative recombination
1Reciprocal lattice
1Reciprocal space
1Room temperature
1Roughness
1Slip
1Solar cell
1Solar cells
1Stress effects
1Stress relaxation
1Surface morphology
1TEM
1Tandem solar cell
1Temperature dependence
1Ternary compound
1Thickness
1Thin films
1XRD
1p n junction

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