Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « J. H. Chu »
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J. Gu < J. H. Chu < J. H. Fang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000619 (2012) Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well
000B42 (2010) Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure
000E13 (2009) Large reversible magnetocaloric effect in Tb2In
001250 (2007) Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well
001318 (2007) Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well
001749 (2005) Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
001B37 (2003) Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
001C88 (2002-04-29) Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements
001E29 (2001-09-17) Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
001E37 (2001-08-27) Longitudinal optic phonon-plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates
002027 (2000-03-15) Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures
002469 (1997-02-01) Magneto-transport properties of semiconductors from flatband magnetocapacitance spectroscopy
002500 (1997) Magnetic-field-inducer carrier freeze-out in narrow-gap semiconductors analysed by capacitance spectroscopy
002571 (1996-04-01) Potential model for the subband structures in the inversion layer of narrow-gap semiconductor heterostructures
002735 (1994-12-15) Hole subband in p-type channel of semiconductor heterostructures

List of associated KwdEn.i

Nombre de
documents
Descripteur
9Experimental study
7III-V semiconductors
7Magnetoresistance
6Gallium arsenides
6Magnetic field effects
5Indium compounds
5Quantum wells
5Shubnikov-de Haas effect
5Two-dimensional electron gas
4Aluminium compounds
3High electron mobility transistors
3Interface states
3Oscillations
3Semiconductor materials
3Subband
2Aluminium arsenides
2Aluminium nitrides
2Binary compounds
2Capacitance
2Gallium Indium Arsenides Mixed
2Gallium nitrides
2Heterostructures
2Indium antimonides
2Indium arsenides
2Indium nitrides
2Modulation doping
2Planar doping
2Rashba effect
2Spin-orbit interactions
2Ternary compounds
2Theoretical study
2Transport processes
2Weak localisation
1Aluminium Indium Arsenides Mixed
1Asymmetry
1Band structure
1Beats
1CV characteristic
1Charge carriers
1Conduction bands
1Defect states
1Depletion layers
1Double barrier structure
1Drude model
1Electrical conductivity
1Electrical conductivity transitions
1Electron density
1Electron gas
1Electron spin polarization
1Electron-defect interactions
1Electron-electron interactions
1Energy-level density
1Fermi level
1Ferromagnetic materials
1Ferromagnetic-antiferromagnetic transitions
1Ferromagnetic-paramagnetic transitions
1Galvanomagnetic effects
1Hall effect
1High field
1Holes
1Hysteresis loss
1Indium alloys
1Indium phosphide
1Interband transitions
1Intermetallic compounds
1Inversion layers
1MOS junctions
1Magnetic refrigerators
1Magnetic transitions
1Magnetocaloric effects
1Metal-insulator transition
1Misfit dislocations
1Narrow band gap semiconductors
1Non linear effect
1Phonon-plasmon interactions
1Potential well
1Quantum transport
1Raman spectra
1Rare earth alloys
1Reversible processes
1Roughness
1Self consistency
1Semiconductor heterojunctions
1Terbium alloys
1Tunnel effect
1g-factor

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