Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « HAI LU »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
H.-Z. Chen < HAI LU < HAI TAO DAI  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000084 (2013) Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zinc oxide thin film transistors
000896 (2011) Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress
000B55 (2010) Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAIO2(100) substrates
001174 (2008) Electrical properties of InGaN grown by molecular beam epitaxy
001421 (2007) Electron-density dependence of longitudinal-optical phonon lifetime in InN studied by subpicosecond time-resolved Raman spectroscopy

List of associated KwdEn.i

Nombre de
documents
Descripteur
3Gallium nitride
3Indium nitride
2Active region
2Binary compound
2Electroluminescence
2Light emitting diode
2Multiple quantum well
2Ternary compound
1Accumulation layers
1Active layer
1Amorphous material
1Blue light
1Carrier density
1Defect
1Doping
1Drain current
1Electric stress
1Electrical characteristic
1Electron density
1Electron hole pair
1Enhancement mode
1Excited states
1Fermi level
1Gallium oxide
1Green light
1Hall effect
1High resolution
1High temperature
1High temperature test
1Homojunctions
1Indium
1Indium nitrides
1Indium oxide
1Injection current
1Lamellar structure
1Lifetime
1Localized state
1Low current
1Low temperature
1MOCVD
1Magnesium additions
1Molecular beam epitaxy
1Non radiative recombination
1Optical phonons
1Output power
1P type conductivity
1Performance evaluation
1Phonon mode
1Photoconductivity
1Plane structure
1Polar semiconductors
1Quantum well
1Rate equation
1Series resistance
1Temperature dependence
1Temperature effect
1Thermal stress
1Thin film transistor
1Third order
1Time resolved spectra
1Transport process
1X ray diffraction
1X ray spectrum
1Zinc oxide
1p n junction

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "HAI LU" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "HAI LU" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    HAI LU
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024