H. W. Zhou < H. Wang < H. X. Han

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
000581 (2012)		Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
000600 (2012)		Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
000B11 (2010)		Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
000B14 (2010)		Inverted small molecule organic solar cells with Ca modified ITO as cathode and MoO3 modified Ag as anode
000B97 (2010)		Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process
000C23 (2010)		Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
000C82 (2009)		The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
000C83 (2009)		The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
000D17 (2009)		Suppression of indium droplet formation by adding CC14 during metalorganic chemical vapor deposition growth of InN films
000E16 (2009)		Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
001043 (2008)		Self-pulsation in a two-section DFB laser with a varied ridge width
001065 (2008)		Photoelectric characteristics of metal/InGaN/GaN heterojunction structure
001110 (2008)		Investigation on the structural origin of n-type conductivity in InN films
001636 (2006)		Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition
001728 (2005)		Study on the thermal stability of InN by in-situ laser reflectance system
001783 (2005)		Low-temperature growth of InN by MOCVD and its characterization
001802 (2005)		Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs
001D84 (2002)		Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping
001F40 (2001)		Highly sensitive spectrofluorimetric determination of trace amounts of indium with 5-bromine-salicylaldehyde salicyloylhygrazone
001F97 (2000-10-02)		X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices
002035 (2000-02-15)		Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots

---

List of associated KwdEn.i

Nombre de documents	Descripteur
11	MOCVD
9	XRD
8	Experimental study
8	III-V semiconductors
8	Thin films
7	Indium nitride
5	Photoluminescence
4	Atomic force microscopy
4	Binary compounds
4	Cathodoluminescence
4	Gallium arsenides
4	Gallium nitride
3	Activation energy
3	CVD
3	Carrier density
3	Crystal growth from vapors
3	Gallium Indium Nitrides Mixed
3	Growth mechanism
3	Hall effect
3	Indium nitrides
3	Spectral line shift
3	Stress relaxation
2	Adatoms
2	Buffer layer
2	DLTS
2	Droplets
2	Epitaxial layers
2	Growth rate
2	III-V compound
2	Indium
2	Indium arsenides
2	Indium compounds
2	Island structure
2	Lateral growth
2	Morphology
2	Multiple quantum well
2	Precursor
2	Reflectivity
2	Roughness
2	Scanning electron microscopy
2	Semiconductor materials
2	Semiconductor quantum dots
2	Surface diffusion
2	Temperature dependence
2	Temperature effects
2	Thick films
2	Thickness
1	Analytical method
1	Angular variation
1	Annealing
1	Anode
1	Application
1	Aqueous solution
1	Balance
1	Basic solution
1	Binary compound
1	Capacitance
1	Carrier mobility
1	Cathode
1	Characterization
1	Charge carrier trapping
1	Charge transport
1	Chemical analysis
1	Chemical interdiffusion
1	Circuit parameter
1	Close packing
1	Closed form equation
1	Coalescence
1	Compressive stress
1	Copper Gallium Indium Selenides Mixed
1	Copper complex
1	Crystal defects
1	Crystal doping
1	Crystal perfection
1	Cubic lattices
1	Defect density
1	Defect formation
1	Density
1	Desorption
1	Diffusion
1	Distributed feedback lasers
1	Donor center
1	EBIC
1	Edge dislocations
1	Electric field effects
1	Electrical conductivity
1	Electroluminescence
1	Electron traps
1	Electronic structure
1	Epitaxy
1	Equivalent circuit
1	Etching
1	Exciton
1	Experimental result
1	Fabrication property relation
1	Fill factor
1	Fluctuations
1	Fluorescence spectrometry
1	Frequency characteristic
1	Fullerenes

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "H. Wang" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "H. Wang" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    H. Wang
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024