Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « GUOYI ZHANG »
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GUOXIN HU < GUOYI ZHANG < GUOYI ZHU  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000D33 (2009) Strain effect on polarized optical properties of c-plane GaN and m-plane GaN
000F20 (2009) Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDs
001183 (2008) Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
001362 (2007) Luminescence degradation of InGaN/GaN violet LEDs
001365 (2007) Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes

List of associated KwdEn.i

Nombre de
documents
Descripteur
3Gallium nitride
2Electroluminescence
2Light emitting diode
2Multiple quantum well
2Voltage current curve
1Active region
1Aluminium nitrides
1Blue light
1Compressive stress
1Crystallinity
1Current density
1Damaging
1Defect formation
1Doping
1Effective mass model
1Gallium nitrides
1Indium Gallium Nitrides Mixed
1Indium additions
1Indium nitride
1Indium nitrides
1Injection current
1Interfacial layer
1Interrupts
1Laser diodes
1Lateral growth
1Lattice parameters
1Linear polarization
1Luminescence
1MOCVD
1Multistage circuit
1Non radiative recombination
1Optical losses
1Optical properties
1Oscillator strengths
1Output power
1Performance
1Performance evaluation
1Perturbation theory
1Photoluminescence
1Polarized radiation
1Quantum wells
1Radiative recombination
1Recombination center
1Reliability
1Room temperature
1Self-assembled layers
1Semiconductor lasers
1Spontaneous emission
1Strained layer
1Surface morphology
1TE mode
1TM mode
1Ternary compounds
1Valence bands
1XRD

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