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Index « Auteurs » - entrée « GUOQING MIAO »
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GUOQING LIU < GUOQING MIAO < GUOQING YAN  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000805 (2011) Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
000808 (2011) Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
000907 (2011) Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method
000C01 (2010) Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method
000E20 (2009) Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition
000F05 (2009) Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique
000F62 (2009) A study of two-step growth and properties of In0.82Ga0.18As on InP
001123 (2008) Improved field emission characteristic of carbon nanotubes by an Ag micro-particle intermediation layer
001186 (2008) Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD
001187 (2008) Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD
001A31 (2004) Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector

List of associated KwdEn.i

Nombre de
documents		Descripteur
9MOCVD
7Buffer layer
7Epitaxial layers
7Scanning electron microscopy
7XRD
6Hall effect
3Gallium Indium Arsenides Mixed
3Gallium arsenides
3Indium phosphide
3Low pressure
3Photoluminescence
3Raman spectra
3Semiconductor materials
2Atomic force microscopy
2Carrier density
2Carrier mobility
2Crystal morphology
2Indium arsenides
2Mismatch lattice
2Surface morphology
2Surface structure
2Thickness
1Annealing
1Antireflection coating
1Bandwidth
1Binary compound
1Binary compounds
1Carbon nanotubes
1Cavity resonator
1Compressive stress
1Cost lowering
1Current density
1Deposition process
1Droplets
1Electric field
1Electrochemical method
1Experimental study
1Field emission
1Field emitter
1Film growth
1Frequency shift
1Gallium Indium Arsenides
1Gallium antimonides
1Growth mechanism
1Growth rate
1Heat treatments
1III-V compound
1III-V semiconductors
1Indium Antimonides arsenides
1Indium antimonides
1Inorganic compounds
1Large scale
1Microelectronic fabrication
1Misfit dislocations
1Nanoelectronics
1Nanostructures
1Nanotechnology
1Nanotube devices
1Nanowires
1Optical coating
1Optical properties
1Phonons
1Photodetector
1Quantum yield
1Quaternary compound
1Raman scattering
1Recrystallization
1Scanning force microscopy
1Spectral line shift
1Strained layer
1Stress effects
1Thermal annealing
1Transmission electron microscopy
1p i n junctions

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