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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « G. H. Li »
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G. H. Fan < G. H. Li < G. H. Liu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
001503 (2006) Transport properties of InSb nanowire arrays
001570 (2006) Photoluminescence of ZnO thin films on Si substrate with and without ITO buffer layer
001B86 (2003) Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
001F03 (2001) Structural and optical characterization of nanocrystals of the InAs-InP system embedded in amorphous SiO2 thin films
002044 (2000) X-ray photoelectron and Raman spectroscopy of nanocrystalline Ga0.62In0.38Sb-SiO2 composite films
002067 (2000) Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy
002075 (2000) Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size
002253 (1999) Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) : Special issue papers on quantum dots
002361 (1998) Pressure behaviour of photoluminescence from InAs submonolayer in GaAs matrix
002544 (1996-11-15) High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
6Photoluminescence
4Gallium arsenides
4III-V semiconductors
4Indium arsenides
4Semiconductor materials
4Ternary compounds
3Aluminium arsenides
3Pressure effects
3Quantum dots
3Thin films
2Atomic force microscopy
2Binary compounds
2Composite materials
2Indium antimonides
2Nanocrystal
2Raman spectra
2Self assembly
2Silicon oxides
2XRD
1Activation energy
1Amorphous state
1Band offset
1Buffer layer
1Carrier density
1Characterization
1Confinement
1Crystal growth from vapors
1Electrodeposition
1Energy gap
1Energy-level transitions
1Envelope function
1Excitation intensity
1Excitation spectrum
1Excitons
1Fabrication property relation
1Free carrier
1Gallium antimonides
1Gallium nitrides
1Hydrostatic pressure
1IV characteristic
1Impurities
1Indium Arsenides phosphides
1Indium nitrides
1Infrared spectra
1Inorganic compounds
1Internal field
1Magnetrons
1Molecular beam epitaxy
1Multilayers
1Multiple quantum well
1Nanostructures
1Nanowires
1Non linear effect
1Optical anisotropy
1Optical transmission
1Partial pressure
1Phonons
1Quantum size effect
1Quantum wires
1Radiofrequency sputtering
1Scanning electron microscopy
1Screening
1Self organization
1Solid-solid interfaces
1Spectral line shift
1Sputter deposition
1Temperature effects
1Thermal annealing
1Thickness
1Transmission electron microscopy
1Transport processes
1Traps
1Ultrathin films
1Vibrational modes
1X-ray photoelectron spectra
1Zinc oxides

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