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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « FENGYI JIANG »
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FENGYAN LI < FENGYI JIANG < FENGYONG SUN  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000822 (2011) Improving p-type contact characteristics by Ni-assisted annealing and effects on surface morphologic evolution of InGaN LED films grown on Si ( 1 1 1 )
001263 (2007) The influence of the coating metals with various work function on the photoluminescence of a GaN-based blue LED wafer
001274 (2007) The characteristics of GaN-based blue LED on Si substrate
001296 (2007) Study of polarization field in GaN-based blue LEDs on Si and sapphire substrate by electroluminescence
001814 (2005) Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Gallium nitride
3Indium nitride
3Light emitting diode
2Electroluminescence
2Inorganic compounds
2Light emitting diodes
2MOCVD
2Multiple quantum well
2Series resistance
2Silicon
1Active layer
1Buffer layer
1Chemical etching
1Contact resistance
1Cracks
1Current density
1Energy level population
1Films
1Gallium nitrides
1Growth mechanism
1High performance
1High temperature
1Hydrogen
1Indium nitrides
1Metal coating
1Model potential
1Nickel
1Photoluminescence
1Plasma etching
1Plasmon
1Polarization
1Potential barrier
1Potential difference
1Rocking curve
1Selective etching
1Semiconductor materials
1Shielding effect
1Spectral line shift
1Substrates
1Surface structure
1Tensile stress
1Ternary compounds
1Thermal annealing
1Thermal dissipation
1Thin films
1Wafers
1Work function
1X radiation
1p type semiconductor

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EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "FENGYI JIANG" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

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   |clé=    FENGYI JIANG
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