Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « F. H. Yang »
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F. Gao < F. H. Yang < F. Han  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000763 (2011) Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots
001B13 (2003-02-03) Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity
001C35 (2003) Capacitance-voltage spectroscopy of In0.5Ga0.5As self-assembled quantum dots in double quantum wells under selective photo-excitation
002035 (2000-02-15) Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots
002081 (2000) Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots

List of associated KwdEn.i

Nombre de
documents
Descripteur
5Gallium arsenides
4Experimental study
4III-V semiconductors
4Photoluminescence
3Indium arsenides
2Indium compounds
2Semiconductor quantum dots
1Aluminium Gallium Arsenides Mixed
1Barrier layer
1Beryllium additions
1Binary compounds
1Bistability
1CV characteristic
1Charge density
1DLTS
1Doped materials
1Doping
1Electron traps
1Field effect transistor
1Gates
1Heterostructures
1Hole traps
1III-V compound
1Illumination
1Interface states
1Line broadening
1Logic circuit
1Multiple quantum well
1Nanostructured materials
1Near infrared radiation
1Photoexcitation
1Quantum dot
1Quantum dots
1Selective excitation
1Self organization
1Self-assembled layers
1Semiconductor materials
1Silicon additions
1Ternary compounds
1Tunnel effect
1Two-dimensional electron gas
1Voltage current curve
1distributed Bragg reflectors
1microcavities

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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