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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « D. Ding »
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D. Denmark < D. Ding < D. Dong  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
001E38 (2001-08-15) Thermal redistribution of photocarriers between bimodal quantum dots
001F06 (2001) Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
001F21 (2001) Optical properties of InGaAs quantum dots formed on InAlAs wetting layer
001F31 (2001) Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy
001F46 (2001) Growth and characterization of InGaAs/InAlAs quantum cascade lasers
002048 (2000) Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate
002058 (2000) Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
002059 (2000) Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
002063 (2000) Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates
002070 (2000) Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy
002071 (2000) Room temperature (34 °C) operation of strain-compensated quantum cascade lasers
002116 (2000) Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer
002125 (2000) Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots
002137 (2000) Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
002265 (1999) Indium composition dependence of size uniformity of InGaAs quantum dots on (311)B GaAs grown by means of molecular beam epitaxy
002426 (1998) Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Experimental study
12Indium arsenides
12Quantum dots
11Molecular beam epitaxy
10Photoluminescence
9Gallium arsenides
7Crystal growth from vapors
6Self assembly
6Semiconductor materials
5III-V semiconductors
4Atomic force microscopy
4Binary compounds
4Morphology
3Aluminium arsenides
3Buffer layer
3Epitaxial layers
3Heteroepitaxy
3Island structure
3Nanostructures
3Temperature dependence
3Ternary compounds
2Continuous wave lasers
2Current density
2Dimension spectrum
2Experiments
2Heterojunctions
2Rapid thermal annealing
2Semiconductor lasers
2Stress relaxation
2TEM
2Thin films
1Absorption spectroscopy
1Application
1Characterization
1Chemical composition
1Coatings
1Coherent three dimensional islands
1Conduction band
1Confinement
1Crystal growth habit
1Crystal seeds
1Dimensions
1Electric power generation
1Fabricating uniform dense quantum dots
1Fabrication property relation
1Growth mechanism
1Indium composition
1Indium compounds
1Interdiffusion
1Line intensity
1Line shape
1Line widths
1Microstructure
1Mismatch lattice
1Modulated materials
1Multilayers
1Nanometer scale
1Operating mode
1Optical properties
1Ordering
1Overlayers
1Photoconductivity
1Quantity ratio
1Quantum cascade (QC) lasers
1Quantum wells
1Quantum wires
1Self-assembled layers
1Semiconducting gallium arsenide
1Semiconducting indium compounds
1Semiconducting indium gallium arsenide
1Semiconductor growth
1Semiconductor quantum dots
1Solid solutions
1Strain-compensated quantum cascade (QC) lasers
1Surface structure
1Surfaces
1Theory
1Thermoelectricity
1X ray diffraction analysis

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