Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « C. Chen »
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C. Chatillon < C. Chen < C. Cheng  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
000784 (2011) Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation
002415 (1998) Effect of oxygen concentration and annealing treatment on the optical properties of the transparent conductive CdIn2O4 thin films
002421 (1998) Carbon doped 980nm InGaAs strained quantum well lasers grown by metalorganic chemical-vapor deposition
002545 (1996-11-15) First-principles study of the quaternary semiconductor superlattices (GaX)1/(YAs)1 (X=N, P; Y=Al, In)

List of associated KwdEn.i

Nombre de
documents
Descripteur
1Activation energy
1Aluminium Arsenides
1Aluminium arsenides
1Annealing
1Annealing temperature
1Application
1Band theory
1Binary compounds
1Blueshift
1CVD
1Cadmium compounds
1Carbon
1Charge carrier density
1Chemical bonds
1Conductive films
1Crystal structure
1Doped materials
1Doping
1Electrical characteristic
1Electronic structure
1Energy gap
1Exciton
1Experiments
1Free carrier
1Gallium Arsenides
1Gallium nitrides
1Gallium phosphides
1High temperature
1Indium Arsenides
1Indium arsenides
1Indium compounds
1Light emitting diode
1MOCVD
1MOVPE method
1Microelectronic fabrication
1Microstructure
1Morphological analysis
1Nucleation
1Optical properties
1Oxides
1Oxygen
1Oxygen concentration
1Photoluminescence
1Properties of materials
1Raman scattering
1Redshift
1Rutherford backscattering
1S shape
1Semiconductor lasers
1Semiconductor materials
1Strained quantum well
1Superlattices
1Temperature effect
1Ternary compounds
1Theoretical study
1Thermal behavior
1Ultraviolet radiation
1X ray diffraction analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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