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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « BO BAOXUE »
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BIYE REN < BO BAOXUE < BO CAI  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000188 (2013) Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing
001F42 (2001) High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets
002094 (2000) InGaAsP/GaAs SCH SQW laser arrays grown by LPE
002358 (1998) Single-lobe operation of BA InGaAsP/GaAs SCH SQW lasers
002397 (1998) High-power BA Al-free InGaAsP/GaAs SCH SQW lasers

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Semiconductor lasers
3Binary compounds
3Gallium arsenides
3High power
3Indium arsenides
3Quaternary compounds
3SCH lasers
2Epitaxy
2Experimental study
2Gallium Arsenides
2Indium Phosphides
2Laser arrays
2Laser diodes
2Ternary compounds
1Annealing
1Blueshift
1CW lasers
1Crystal growth
1Current density
1Energy gap
1Far field
1Fill factor
1Gallium phosphide
1Gallium phosphides
1High temperature
1High-power lasers
1Indium phosphide
1Indium phosphides
1Infrared laser
1Injection laser
1Intensity distribution
1LPE
1Liquid phase
1Low pressure
1Luminous intensity current characteristic
1Output power
1Power laser
1Quantum well
1Quantum well lasers
1Quantum wells
1Quaternary compound
1Silicon oxides
1Strained quantum well
1Thin film
1Wide band gap semiconductors

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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