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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « B. S. Zhang »
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B. S. Ma < B. S. Zhang < B. Sakaran  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
000123 (2013) Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells
000600 (2012) Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
001476 (2007) Cathodoluminescence study of InGaN/GaN quantum-well LED structures grown on a Si substrate
001951 (2004) Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows

List of associated KwdEn.i

Nombre de
documents		Descripteur
3III-V semiconductors
2Aluminium nitrides
2Epitaxial layers
2Gallium nitrides
2Indium nitrides
2MOCVD
2Photoluminescence
2Thin films
1Atomic force microscopy
1CVD
1Cathodoluminescence
1Concentration effect
1Cracks
1Cross section
1Crystal growth from vapors
1Diffusion
1Dispersive spectrometry
1Electroluminescence
1Energy dispersion
1Epitaxy
1Experimental study
1Gallium
1Gallium nitride
1Gallium phosphide
1Growth mechanism
1III-V compound
1Indium
1Indium Gallium Nitrides
1Indium phosphide
1Inhomogeneity
1Interdiffusion
1Interfacial layer
1Light emitting diodes
1Luminescence
1Microstructure
1Nanostructured materials
1Optoelectronic devices
1Photovoltaic cell
1Potential barrier
1Precursor
1Quantum wells
1Quaternary alloys
1Quaternary compounds
1Radiative recombination
1Room temperature
1Secondary ion mass spectrometry
1Solar cell
1Spatial resolution
1Tandem solar cell
1Template reaction
1Ternary compound
1Thickness
1V shape
1Wafers
1X-ray spectra
1XRD
1p n junction

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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