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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « AffRegion.i » - entrée « État de New York »
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List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
001160 (2008) Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems
001875 (2004-06-28) Chemistry-mediated two-dimensional to three-dimensional transition of In thin films
001A80 (2003-08-15) Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths
001B10 (2003-02-15) Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure
001E13 (2001-12-15) Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures
002006 (2000-07-15) Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation
002157 (1999-11-15) Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well
002176 (1999-08-01) Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices
002185 (1999-06-15) Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles
002199 (1999-02-08) Bright-blue electroluminescence from a silyl-substituted ter-(phenylene-vinylene) derivative
002303 (1998-09-15) Saturation spectroscopy and electronic-state lifetimes in a magnetic field in InAs/AlxGa1-xSb single quantum wells
002452 (1997-07-07) Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region
002647 (1995-08-07) A high-current-gain, high-speed P-n-p AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistor

List of associated Author.i

Nombre de
documents		Descripteur
4Fred H. Pollak
4Y. S. Huang
3D. Y. Lin
2C. W. Tang
2K. K. Tiong
2S. T. Lee
1A. Amtout
1B. D. Mccombe
1B. E. Hammons
1C. E. Stutz
1C. H. Woo
1C. S. Lee
1C. Zhang
1D. C. Streit
1D. G. Deppe
1D. L. Huffaker
1D. R. Hang
1E. F. Schubert
1F. F. Fang
1G. Gumbs
1H. C. Tseng
1H. L. Wei
1H. Q. Hou
1Hanchen Huang
1I. Bello
1I. Lo
1J. K. Sheu
1J. Kono
1J. M. Ballingall
1J. P. Debray
1J. S. Liang
1J. Shi
1K. C. Hwang
1K. R. Evans
1K. W. Wong
1L. G. Zhou
1L. Malikova
1L. S. Hung
1M. G. Mason
1M. S. Goorsky
1M. Wang
1M. Wojtowicz
1P. A. Folkes
1R. A. Stall
1R. C. Hsieh
1R. Hoffman
1Ruey-Ming Chen
1S. D. Wang
1S. H. Liang
1S. J. Allen
1S. K. Singh
1T. H. Chen
1T. S. Shou
1Th. Gessmann
1Tien-Yau Luh
1W. C. Mitchel
1W. I. Wang
1W. Lin
1W. Xu
1X. X. Zhang
1Y. F. Chen
1Y. H. Lo
1Y. K. Tu
1Y. Qian
1Y.-L. Li
1Z. H. Zhu
1Z. Zeng
1Zhiqiang Gao

List of associated AffOrg.i

Nombre de
documents		Descripteur
1Université du Texas à Austin

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