Le cluster Gallium compounds - Semiconductor quantum wells
| 001890 (2004-05) | InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer | |
| 001915 (2004-02-23) | Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)] | |
| 001916 (2004-02-16) | Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells | |
| 001872 (2004-06-28) | Investigations on V-defects in quaternary AlInGaN epilayers | |
| 001873 (2004-06-28) | Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers | |
| 001876 (2004-06-21) | Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes | |
| 001889 (2004-05) | Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy | |
| 001898 (2004-04-05) | Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions | |
| 001903 (2004-03-29) | Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes | |
| 001906 (2004-03-15) | High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding | |
| 001910 (2004-03-01) | Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary epilayers | |
| 001A67 (2003-10-15) | Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy | |
| 001A74 (2003-09-01) | Piezoelectric, electro-optical, and photoelastic effects in InxGa1-xN/GaN multiple quantum wells | |
| 001A90 (2003-06-16) | Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells | |
| 001A92 (2003-06-15) | Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells | |
| 001B05 (2003-03-24) | Persistent photoconductivity in InxAlyGa1-x-yN quaternary alloys | |
| 001B07 (2003-03-15) | Spectral analysis of high-harmonic coherent acoustic phonons in piezoelectric semiconductor multiple quantum wells | |
| 001B12 (2003-02-10) | Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells | |
| 001B14 (2003-02-03) | Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN | |
| 001B15 (2003-02-03) | Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN | |
| 001C57 (2002-10-15) | Localized and quantum-well state excitons in AlInGaN laser-diode structure | |
| 001C75 (2002-07-15) | Ordering parameter and band-offset determination for ordered GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells | |
| 001C79 (2002-06-10) | Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures | |
| 001C90 (2002-04-15) | Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures | |
| 001C92 (2002-04-08) | Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells | |
| 001C97 (2002-02-25) | Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys | |
| 001D11 (2002-01-01) | Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy | |
| 001E14 (2001-12-15) | Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells | |
| 001E22 (2001-11-15) | Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well | |
| 001E49 (2001-05-15) | Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures | |
| 001E69 (2001-02-12) | Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells | |
| 001E71 (2001-01-15) | Persistent photoconductivity in InGaN/GaN multiquantum wells | |
| 002040 (2000-01-17) | Stimulated emission study of InGaN/GaN multiple quantum well structures | |
| 002167 (1999-09-15) | Positive and negative persistent photoconductivities in semimetallic AlxGa1-xSb/InAs quantum wells | |
| 002171 (1999-08-30) | Large coherent acoustic-phonon oscillation observed in InGaN/GaN multiple-quantum wells | |
| 002179 (1999-07-12) | Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy | |
| 002198 (1999-02-08) | Piezoelectric effects in the optical properties of strained InGaN quantum wells | |
| 002203 (1999-01-15) | Persistent photoconductivity in semimetallic AlxGa1-xSb/InAs quantum wells | |
| 002303 (1998-09-15) | Saturation spectroscopy and electronic-state lifetimes in a magnetic field in InAs/AlxGa1-xSb single quantum wells | |
| 002317 (1998-06-01) | 650 nm AlGaInP/GaInP compressively strained multi-quantum well light emitting diodes | |
| 002332 (1998-03-30) | Optical modes within III-nitride multiple quantum well microdisk cavities | |
| 002438 (1997-11-15) | kp finite-difference method: Band structures and cyclotron resonances of AlxGa1-xSb/InAs quantum wells | |
| 002457 (1997-05-15) | Effect of well thickness on the two-dimensional electron-hole system in AlxGa1-xSb/InAs quantum wells | |
| 001879 (2004-06-07) | Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes | |
| 001884 (2004-05-15) | Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing | |
| 001885 (2004-05-10) | Indium-assisted synthesis on GaN nanotubes | |
| 001893 (2004-05) | Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding | |
| 001896 (2004-04-05) | On the origin of spin loss in GaMnN/InGaN light-emitting diodes | |
| 001897 (2004-04-05) | Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells | |
| 001900 (2004-04) | InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers | |
| 001905 (2004-03-15) | Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells | |
| 001907 (2004-03-15) | Dynamical conductance through InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures | |
| 001914 (2004-02-23) | Observation of spontaneous ordering in the optoelectronic material GaInNP | |
| 001A60 (2003-11-10) | Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31 | |
| 001A64 (2003-10-27) | Response to Comment on | |
| 001A65 (2003-10-27) | Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers | |
| 001A69 (2003-10-01) | Improving the Performance of AlGaInP Laser Diode by Oxide Annealing | |
| 001A80 (2003-08-15) | Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths | |
| 001A87 (2003-07-01) | AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice | |
| 001A91 (2003-06-15) | Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes | |
| 001B00 (2003-05) | Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes | |
| 001B01 (2003-05) | Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage | |
| 001B08 (2003-03-03) | Strong green luminescence in quaternary InAlGaN thin films | |
| 001B09 (2003-03-01) | Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters | |
| 001B10 (2003-02-15) | Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure | |
| 001B11 (2003-02-15) | Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off | |
| 001C58 (2002-10-15) | Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures | |
| 001C61 (2002-10-01) | Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13Ga0.87N/In0.03Ga0.97N Quantum Wells | |
| 001C66 (2002-08-15) | Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells | |
| 001C74 (2002-07-15) | Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well | |
| 001C78 (2002-06-15) | Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes | |
| 001C84 (2002-05) | High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes | |
| 001C96 (2002-03-18) | Real index-guided InGaAlP red lasers with buried tunnel junctions | |
| 001D00 (2002-02-18) | Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing | |
| 001D05 (2002-02-01) | Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer | |
| 001E16 (2001-12-15) | Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells | |
| 001E26 (2001-10-29) | Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency | |
| 001E27 (2001-10-29) | Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN | |
| 001E28 (2001-09-17) | Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys | |
| 001E32 (2001-09-15) | Influence of Barrier Growth Temperature on the Properties of InGaN/GaN Quantum Well | |
| 001E35 (2001-09) | Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy | |
| 001E46 (2001-06-01) | Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes | |
| 001E48 (2001-05-28) | Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction | |
| 001E52 (2001-05-01) | Comparison of optical transitions in InGaN quantum well structures and microdisks | |
| 001E63 (2001-03) | Microtwin formation mechanism in GaP/AlGaInP/GaAs double heterostructure light-emitting diodes | |
| 001E64 (2001-02-26) | Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells | |
| 001E72 (2001-01-15) | Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells | |
| 001F85 (2000-12-18) | Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells | |
| 001F86 (2000-12-04) | Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures | |
| 001F91 (2000-11-06) | Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells | |
| 002006 (2000-07-15) | Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation | |
| 002007 (2000-07-10) | Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy | |
| 002008 (2000-06-26) | Photoelectrochemical etching of InxGa1-xN | |
| 002009 (2000-06-26) | Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells | |
| 002016 (2000-05-29) | Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy | |
| 002019 (2000-05-15) | Ga0.5In0.5P Barrier Layer for Wet Oxidation of AlAs | |
| 002032 (2000-02-21) | Accurate determination of quasi-Fermi-level separation of semiconductor lasers | |
| 002033 (2000-02-21) | Accurate determination of quasi-Fermi-level separation of semiconductor lasers | |
| 002034 (2000-02-15) | Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes | |
| 002036 (2000-02-14) | Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy |
| This area was generated with Dilib version V0.5.77. |  |