Le cluster Binary compounds - Molecular beam epitaxy
| 001F09 (2001) | Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers | |
| 001405 (2007) | Equilateral-triangle-resonator injection lasers with directional emission | |
| 001591 (2006) | Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission | |
| 001B92 (2003) | Improved performance of 1.3 μm InGaAsP-InP lasers with an AlInAs electron stopper layer | |
| 001F33 (2001) | InGaAs/InGaAsP microdisk lasers grown by GSMBE | |
| 001F66 (2001) | Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE | |
| 002611 (1996) | Investigation of strain-compensated InGaAs(P)/InGaAs(P)/InP multiple quantum well structures grown by LP-MOVPE | |
| 000A58 (2010) | Quantum dot multi-wavelength comb lasers with Si ring resonator | |
| 001495 (2007) | 1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation | |
| 001507 (2006) | Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots | |
| 001537 (2006) | Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition | |
| 001577 (2006) | Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes | |
| 001711 (2005) | The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots | |
| 001735 (2005) | Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm | |
| 001832 (2005) | Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001) | |
| 001871 (2005) | 1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors | |
| 001923 (2004) | Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy | |
| 001975 (2004) | Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy | |
| 001976 (2004) | Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source | |
| 001A37 (2004) | Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures | |
| 001D20 (2002) | The low-frequency electrical noise as reliability estimation for high power semiconductor lasers | |
| 001E82 (2001) | The vertical beam quality of GaInP/AlGaInP strained multiple quantum well laser | |
| 001F63 (2001) | Demonstrations for optical beam qualities of quantum well lasers | |
| 001F64 (2001) | Damage profiles and damage annealing behavior in Al0.168Ga0.348In0.484P/GaAs implanted with 200 keV Zn+ ions | |
| 001F68 (2001) | Band-structure and optical gain for InAsp/In(GaAs)P MQW laser structures | |
| 001F69 (2001) | Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers | |
| 001F72 (2001) | Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equations | |
| 002094 (2000) | InGaAsP/GaAs SCH SQW laser arrays grown by LPE | |
| 002100 (2000) | High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers | |
| 002232 (1999) | Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures | |
| 002233 (1999) | Structural and optical characterization of InAs nanostructures grown on high-index InP substrates | |
| 002234 (1999) | Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates | |
| 002241 (1999) | Self-organization of the InGaAs/GaAs quantum dots superlattice | |
| 002242 (1999) | Self-assembled InAs and In0.9Al0.1As quantum dots on (0 0 1)InP substrates grown by molecular beam epitaxy (MBE) | |
| 002243 (1999) | Room temperature continuous wave visible vertical cavity surface emitting laser | |
| 002271 (1999) | High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition | |
| 002378 (1998) | Novel In0.49Ga0.51P./(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy | |
| 002391 (1998) | InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy | |
| 002426 (1998) | Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy | |
| 002427 (1998) | Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers | |
| 002533 (1997) | Analysis of coupling effect on valence band structures of strained multiple quantum wells | |
| 002588 (1996) | The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE | |
| 002599 (1996) | Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE | |
| 002837 (1993) | Determination of wavelength dependence of the reflectivity at AR coated diode facets | |
| 000730 (2011) | Quantum dot lasers grown by gas source molecular-beam epitaxy | |
| 000831 (2011) | High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure | |
| 000850 (2011) | GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy | |
| 000991 (2010) | The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy | |
| 000C32 (2010) | An InP based wide gain spectrum asymmetric quantum wells for large scale optoelectronic monolithic integration | |
| 000D22 (2009) | Study on Polarization Dependency of InAs Quantum Dot Coupled InGaAsP Quantum Well SOA | |
| 000D42 (2009) | Simulation of a 1550 nm InGaAsP-InP transistor laser | |
| 000D88 (2009) | Optical bistability in InP/GaInAsP equilateral- triangle-resonator microlasers | |
| 000E75 (2009) | Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers | |
| 000E77 (2009) | Fabrication and Characterization of 1.3-μm InAs Quantum-Dot VCSELs and Monolithic VCSEL Arrays | |
| 000F65 (2009) | A ridge width varied two-section index-coupled DFB self-pulsation laser with a wide continuously tunable frequency range | |
| 000F77 (2009) | 1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes Configuration | |
| 001043 (2008) | Self-pulsation in a two-section DFB laser with a varied ridge width | |
| 001078 (2008) | Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique | |
| 001093 (2008) | Mode behavior in triangle and square microcavities | |
| 001191 (2008) | Directional emission InP/GaInAsP square-resonator microlasers | |
| 001254 (2007) | Ultrafast all-optical polarization switching based on "virtual excitation" of InGaAs(P) MQWs | |
| 001358 (2007) | Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy | |
| 001388 (2007) | Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors | |
| 001518 (2006) | The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content | |
| 001582 (2006) | Optical and local current studies on InAs/GaAs quantum dots | |
| 001589 (2006) | Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers | |
| 001614 (2006) | High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD | |
| 001621 (2006) | Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties | |
| 001622 (2006) | Growth of In2O3 single-crystalline film on sapphire (0001) substrate by molecular beam epitaxy | |
| 001633 (2006) | Experimental study of NRZ format wavelength conversion using electroabsorption modulator | |
| 001664 (2006) | Dipole mode photonic crystal point defect laser on InGaAsP/InP | |
| 001693 (2006) | A 1.5 μm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD | |
| 001770 (2005) | Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy | |
| 001810 (2005) | Heat management of MBE-grown antimonide lasers | |
| 001813 (2005) | Growth and characterization of InN on sapphire substrate by RF-MBE | |
| 001831 (2005) | Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy | |
| 001970 (2004) | Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface | |
| 001973 (2004) | Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer | |
| 001974 (2004) | Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm | |
| 001977 (2004) | Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers | |
| 001987 (2004) | MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications | |
| 001A50 (2004) | 1310 nm AlGaInAs-InP polarization insensitive multiple quantum well optical amplifier | |
| 001B39 (2003) | Study on the surface of AlGaInP | |
| 001B45 (2003) | Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer | |
| 001C23 (2003) | Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots | |
| 001C33 (2003) | Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser | |
| 001C45 (2003) | Accurate interband-energy measurements from Ellipsometric spectra | |
| 001D36 (2002) | Strain relaxation of InP film directly grown on GaAs patterned compliant substrate | |
| 001D61 (2002) | Influence of strain on annealing effects of In(Ga)As quantum dots | |
| 001D63 (2002) | InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4 | |
| 001D88 (2002) | Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm | |
| 001D99 (2002) | Analysis of the Al content in semiconductor materials by null ellipsometric spectrometry | |
| 001E87 (2001) | Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers | |
| 001F02 (2001) | Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) | |
| 001F06 (2001) | Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer | |
| 001F07 (2001) | Self-assembled quantum dots, wires and quantum-dot lasers | |
| 001F22 (2001) | Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy | |
| 001F27 (2001) | MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes | |
| 001F31 (2001) | Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy | |
| 001F34 (2001) | InAs self-assembled quantum dots on GaAs/InP by low-pressure metal-organic chemical vapour deposition |
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