| 000240 (2013) |
| H2 annealing effect on the structural and electrical properties of amorphous InGaZnO films for thin film transistors |
| 000317 (2013) |
| Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors |
| 000902 (2011) |
| Effects of Annealing on Structural and Electrical Properties of CulnSe2 Thin Films Prepared by Hybrid Sputtering/Evaporation Processes |
| 000F05 (2009) |
| Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique |
| 000F62 (2009) |
| A study of two-step growth and properties of In0.82Ga0.18As on InP |
| 001110 (2008) |
| Investigation on the structural origin of n-type conductivity in InN films |
| 001389 (2007) |
| Growth, structure and electrical properties of mercury indium telluride single crystals |
| 001759 (2005) |
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| 001922 (2004) |
| Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique |
| 002134 (2000) |
| Carrier mobility distribution in annealed undoped LEC InP material |
| 002592 (1996) |
| Scattering mechanisms of charge carriers in transparent conducting oxide films |
| 000041 (2014) |
| Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature |
| 000269 (2013) |
| Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy |
| 000324 (2013) |
| Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy |
| 000419 (2012) |
| Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures |
| 000995 (2010) |
| The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition |
| 000A16 (2010) |
| Synthesis and thermoelectric properties of p-type Zn-doped ZnxIn1-xSb compounds |
| 000A75 (2010) |
| Performance of InSnZrO as transparent conductive oxides |
| 000A90 (2010) |
| Mobility enhancement of p-type SnO2 by In-Ga co-doping |
| 000B97 (2010) |
| Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process |
| 000D17 (2009) |
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| 000E02 (2009) |
| Multi-carrier transport properties in p-type ZnO thin films |
| 000E29 (2009) |
| Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature |
| 000F04 (2009) |
| Effect of gas composition on the growth and electrical properties of boron-doped diamond films |
| 000F90 (2008) |
| Tungsten-doped In2O3 transparent conductive films with high transmittance in near-infrared region |
| 001001 (2008) |
| The effects of In isoelectronic substitution for Ga on the thermoelectric properties of SrgGa16-xInxGe30 type-I clathrates |
| 001455 (2007) |
| Determination of optical constants and thicknesses of In2O3:Sn films from transmittance data |
| 001504 (2006) |
| Transparent conductive oxide thin films of tungsten-doped indium oxide |
| 001516 (2006) |
| The superconductivity in boron-doped polycrystalline diamond thick films |
| 001648 (2006) |
| Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy |
| 001676 (2006) |
| Co-electrodeposition and characterization of Cu (In, Ga)Se2 thin films |
| 001708 (2005) |
| The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target |
| 001888 (2004-05) |
| Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy |
| 001A47 (2004) |
| A novel transparent pn+ junction based on indium tin oxides |
| 001C08 (2003) |
| Fabrication and characterization of indium-doped p-type SnO2 thin films |
| 001D64 (2002) |
| Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats |
| 001D67 (2002) |
| High-quality indium tin oxide films prepared at room temperature by oxygen ion beam assisted deposition |
| 001D97 (2002) |
| Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers |
| 001F57 (2001) |
| Effects of plasma treatment on the electrical and optical properties of indium tin oxide films fabricated by r.f. reactive sputtering |
| 001F79 (2001) |
| A new transparent conductive thin film In2O3:Mo |
| 002095 (2000) |
| In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE |
| 002302 (1998-10) |
| Optical and electrical properties of Sn-doped indium oxide films deposited on polyester by reactive evaporation |
| 002404 (1998) |
| Growth and transport properties of InAs thin films on GaAs |
| 002588 (1996) |
| The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE |
| 002702 (1995) |
| Preparation and properties of transparent conducting indium tin oxide films deposited by reactive evaporation |
| 002736 (1994-12-01) |
| Deep center scattering potential in InGaP |
| 002797 (1994) |
| High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy |
| 000027 (2014) |
| High mobility transparent conductive W-doped In2O3 thin films prepared at low substrate temperature and its application to solar cells |
| 000070 (2013) |
| Thermoelectric properties of In1.3-xSnxSe prepared by spark plasma sintering method |
| 000074 (2013) |
| The structural, elastic and thermoelectric properties of Fe2VAl at pressures |
| 000080 (2013) |
| The effect of secondary electrons on emission |
| 000147 (2013) |
| Physical Mechanism of Surface Roughening of the Radial Ge-Core/Si-Shell Nanowire Heterostructure and Thermodynamic Prediction of Surface Stability of the InAs-Core/GaAs-Shell Nanowire Structure |
| 000160 (2013) |
| Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy |
| 000213 (2013) |
| InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy |
| 000237 (2013) |
| High temperature thermoelectric and magnetic properties of InxNdyCo4Sb12 skutterudites |
| 000254 (2013) |
| Ferromagnetism in Cr doped In2O3 |
| 000277 (2013) |
| Effects of Ge Dopant on Thermoelectric Properties of Barium and Indium Double-Filled p-Type Skutterudites |
| 000281 (2013) |
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| 000286 (2013) |
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| 000292 (2013) |
| Dopant-induced band filling and bandgap renormalization in CdO: In films |
| 000296 (2013) |
| Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature |
| 000310 (2013) |
| Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films |
| 000337 (2013) |
| A novel ITO/AZO/SiO2/p-Si frame SIS heterojunction fabricated by magnetron sputtering |
| 000372 (2012) |
| The effects of tris(2-phenylpyridine) iridium on the hole injection and transport properties of 4,4',4"-tri(N-carbazolyl)-triphenylamine thin films |
| 000400 (2012) |
| Study of sulphidation of Cu-In nanoparticle precursor films with an air-stable process |
| 000403 (2012) |
| Structural, optical and electrical properties of low-temperature deposition Cu(InxGa1-x)Se2 thin films |
| 000451 (2012) |
| P-type indium oxide thin film for the hole-transporting layer of organic solar cells |
| 000485 (2012) |
| Interfacial Charge Carrier Dynamics of the Three-Component In2O3-TiO2-Pt Heterojunction System |
| 000548 (2012) |
| Enhanced doping efficiency of the remotely p-doped InAs/InP core-shell nanowires: A first principles study |
| 000572 (2012) |
| Effects of Excess Sb on Thermoelectric Properties of Barium and Indium Double-Filled Iron-Based p-Type Skutterudite Materials |
| 000656 (2011) |
| Ultrafast hot carrier dynamics in InN epitaxial films |
| 000729 (2011) |
| Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy |
| 000733 (2011) |
| Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector |
| 000770 (2011) |
| Optical and electrical properties of zinc oxide/indium/zinc oxide multilayer structures |
| 000805 (2011) |
| Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD |
| 000808 (2011) |
| Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD |
| 000824 (2011) |
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| 000829 (2011) |
| Highly Transparent and Conductive Zn0.86Cd0.11In0.03O Thin Film Prepared by Pulsed Laser Deposition |
| 000833 (2011) |
| High-Temperature Thermoelectric Properties of Co4Sb12-Based Skutterudites with Multiple Filler Atoms: Ce0.1InxYbyCo4Sb12 |
| 000837 (2011) |
| High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition |
| 000907 (2011) |
| Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method |
| 000A52 (2010) |
| Room temperature Er3+ 1.54 μm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering |
| 000A65 (2010) |
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| 000A81 (2010) |
| Optical and electrical properties of In-doped CdO thin films fabricated by pulse laser deposition |
| 000B20 (2010) |
| Influence of oxygen flow rate on microstructural, electrical and optical properties of indium tin tantalum oxide films |
| 000B33 (2010) |
| Hydrogen effects on crystallinity, photoluminescence, and magnetization of indium tin oxide thin films sputter-deposited on glass substrate without heat treatment |
| 000B75 (2010) |
| Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films |
| 000C01 (2010) |
| Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method |
| 000C03 (2010) |
| Effect of ZnO buffer layer on AZO film properties and photovoltaic applications |
| 000C20 (2010) |
| Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD |
| 000C71 (2009) |
| Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al2O3 (0 0 0 1) by MOCVD |
| 000C75 (2009) |
| Thermoelectric properties of indium-filled skutterudites prepared by combining solvothermal synthesis and melting |
| 000C78 (2009) |
| Theoretical study of ultrafast index dynamics in semiconductor optical amplifiers |
| 000C79 (2009) |
| Theoretical study of InGaAsP-InP active microring |
| 000D18 (2009) |
| Superconductivity in the hole-doped oxy-arsenide RE1-xSrxFeAsO (RE = La, Pr) |
| 000D70 (2009) |
| Physical properties and growth kinetics of co-sputtered indium-zinc oxide films |
| 000E97 (2009) |
| Effects of substrate temperature on the structural and electrical properties of Cu(In,Ga)Se2 thin films |
| 000F07 (2009) |
| Effect of annealing on electrical properties of InAsSb films grown on GaAs substrates by molecular beam epitaxy |
| 000F12 (2009) |
| Direct observation of single InAs/GaAs quantum dot spectrum without mesa or mask |
| 000F56 (2009) |
| Amorphous tungsten-doped In2O3 transparent conductive films deposited at room temperature from metallic target |
