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Serveur d'exploration sur l'Indium

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Le cluster Binary compound - Ternary compound

Terms

119Binary compound
122Ternary compound
114Indium phosphide
34Gallium phosphide

Associations

Freq.WeightAssociation
5252Binary compound - Ternary compound
3838Binary compound - Indium phosphide
3030Gallium phosphide - Indium phosphide
Documents par ordre de pertinence
000863 (2011) Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures
000B02 (2010) Light-splitting photovoltaic system utilizing two dual-junction solar cells
001B95 (2003) High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
000123 (2013) Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells
000216 (2013) InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering
000368 (2012) The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors
000809 (2011) Influence of a Barrier Layer on the Formation of AuBe Ohmic Contact With the p-GaAs Bases of Heterojunction Bipolar Transistors
000C50 (2010) A Composite Transistor to Suppress Kink Phenomenon in HBTs for Broadband Design
001590 (2006) Multiplication characteristics of InP/InGaAs avalanche photodiodes with a thicker charge layer
001618 (2006) High performance of gated-mode single-photon detector at 1.55 μm
001662 (2006) Direct wafer bonding technology employing vacuum-cavity pre-bonding
001689 (2006) Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator
001704 (2005) Theoretical analysis of the bandgap for the intermixed Gainp/AlgaInP quantum wells
001798 (2005) InGaAs/InGaAsP microavity laser with directional output waveguide
001802 (2005) Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs
001806 (2005) High-volume production of 650nm GaInP/AlGaInP laser diodes
001835 (2005) Dual wavelength 650-780nm laser diodes
001850 (2005) Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation
001852 (2005) Applications of ICP in optoelectronic device fabrication
001A14 (2004) Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers
001B97 (2003) High performances of InP/InGaAs heterojunction bipolar transistors with a δ-doped sheet between two spacer layers
001F44 (2001) Gsmbe growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT
000069 (2013) Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition
000073 (2013) Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
000075 (2013) The investigation of GaInP solar cell grown by all-solid MBE
000158 (2013) Performance Enhancement of Blue InGaN Light-Emitting Diodes With InGaN Barriers and Dip-Shaped Last Barrier
000188 (2013) Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing
000222 (2013) Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers
000225 (2013) Improved Quantum Efficiency in Semipolar (1101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth
000228 (2013) Impact Ionization in Absorption, Grading, Charge, and Multiplication Layers of InP/InGaAs SAGCM APDs With a Thick Charge Layer
000326 (2013) An improved model for InP/InGaAs double heterojunction bipolar transistors
000371 (2012) The experimental investigation on dark current for InGaAs-InP avalanche photodiodes
000428 (2012) Quasi-Axial GRIN Lens Implemented in Wedge-Shaped Fiber Coupling With InP-Based PLC
000500 (2012) Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays
000643 (2012) A Combined Model With Electrothermal Coupling and Electromagnetic Simulation for Microwave Multifinger InP-Based DHBTs
000740 (2011) Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells
000792 (2011) Long Wavelength Multiple Resonant Cavities RCE Photodetectors on GaAs Substrates
000813 (2011) InP Lateral Overgrowth Technology for Silicon Photonics
000819 (2011) In situ photoelectrocatalytic generation of bactericide for instant inactivation and rapid decomposition of Gram-negative bacteria
000891 (2011) Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices
000896 (2011) Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress
000897 (2011) Effects of sodium sulfamate on electrodeposition of Cu(In,Ga)Se2 thin film
000905 (2011) Effect of contact spreading layer on photovoltaic response of InGaN-based solar cells
000922 (2011) Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and Temperature
000972 (2011) 100 Gb/s RZ-OOK transmission through 212 km deployed SSMF using monolithically integrated ETDM receiver module
000A68 (2010) Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays
000B29 (2010) Impedance spectroscopy characterization of proton-irradiated GaInP/GaAs/Ge triple-junction solar cells
000B38 (2010) High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells for General Lighting Application
000B43 (2010) Free-standing GaN-based LEDs with ALD-Al2O3/Si substrate removed by wet etching
000B55 (2010) Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAIO2(100) substrates
000B66 (2010) Enhancement in light extraction efficiency from GaN based LEDs with nanopores ITO p-contact grown on patterned sapphire substrate
000D10 (2009) Synthesis and characterization of novel InVO4-TiO2 thin films using the low temperature sol
000D55 (2009) Prospective important semiconducting nanotubes: synthesis, properties and applications
000D85 (2009) Optical properties studies in InGaN/GaN multiple-quantum well
000E24 (2009) Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes
000E65 (2009) Fiber-coupled near-infrared single-photon spectrum analyzer based on a InGaAs/InP avalanche photodiode single-photon detector
000F30 (2009) Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode
000F31 (2009) Cyclic voltammetry study of electrodeposition of Cu(In,Ga)Se2 thin films
000F59 (2009) Advanced InP Technology for High Performance 40 Gb/s (RZ-) DQPSK Transponder
001018 (2008) Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
001035 (2008) Strain Engineered Quantum Dots for Long Wavelength Emission
001087 (2008) Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 μm
001122 (2008) Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching
001210 (2008) Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz
001216 (2008) Cathodoluminescence study of GaN-based film structures
001329 (2007) Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion
001350 (2007) Multiplication Characteristics of InP/InGaAs Avalanche Photodiodes with Thick Multiplication and Charge Layers
001404 (2007) Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings
001409 (2007) Enhanced output of flip-chip light-emitting diodes with a sidewall reflector
001500 (2006) Wavelength-selective photodetectors operating at long wavelength
001512 (2006) Theoretical study of phase separation in wurtzite InGaN
001553 (2006) Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects
001557 (2006) Role of deep traps in carrier generation and transport in differently doped InP wafers
001559 (2006) Recent advances in photonic integrated circuits
001561 (2006) Quadratic electro-optic effects and electro-absorption process in InGaN/GaN cylinder quantum dots
001596 (2006) Long wavelength integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity structure
001609 (2006) InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
001644 (2006) Electron irradiation-induced defects in InP pre-annealed at high temperature
001695 (2006) 10Gbps zero-chirp compact transmitter with InP MQW mach-zehnder modulator
001722 (2005) Synthesis and characterization InP and Ga2O3 nanowires
001741 (2005) Simulation of InP-based monolithically integrated PIN-HEMT front-end optical receiver
001808 (2005) High-performance InP-based resonant cavity enhanced photodetector based on InP/air-gap Bragg reflectors
001861 (2005) A practical method of suppressing photovoltaic noise in Fe : LiNbO3
001869 (2005) 980 nm high power strained quantum well lasers array fabricated by MBE
001988 (2004) MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells
001A06 (2004) High power polarization-insensitive 1.3 μm InGaAsP-InP quantum-well superluminescent emission diodes grown by MOVPE
001B82 (2003) MOCVD growth of strain-compensated multi-quantum wells light emitting diode
001B89 (2003) InGaN/GaN MQW high brightness LED grown by MOCVD
001C05 (2003) Field-aided collection in GaInP2 top solar cells
001C53 (2003) 1.55 μm AlGaInAs/InP polarization-insensitive optical amplifier with tensile strained wells grown by MOCVD
001D33 (2002) Study of P-on-N GaINP2/GaAs tandem cells
001D46 (2002) Phase matching pseudo-resonant tunable InP-based MOEMS
001D72 (2002) Formation and charge control of a quantum dot by etched trenches and multiple gates
001D73 (2002) Fabrication of high-brightness blue InGaN/GaN MQW LEDs
001E95 (2001) Surface micromachining techniques in InP based micro-opto-electro-mechanical system
001F13 (2001) Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor
001F53 (2001) Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode|non-aqueous electrolyte
002087 (2000) Native oxided AlAs current blocking layer for AlGaInP high brightness light emitting diodes
002141 (2000) An InP-based monolithic integration of 1.55um MQW laser diode and HBT driver circuit
002147 (2000) 1.3 μm integrated superluminescent light source
Wicri

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