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Serveur d'exploration sur l'Indium

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Le cluster MOCVD - Epitaxial layers

Terms

175MOCVD
126Epitaxial layers
102CVD
91Gallium nitrides
105Indium nitrides
35Aluminium nitrides
211Atomic force microscopy
121Multiple quantum well

Associations

Freq.WeightAssociation
3131Epitaxial layers - MOCVD
3131CVD - MOCVD
7878Gallium nitrides - Indium nitrides
3232Aluminium nitrides - Gallium nitrides
3030Aluminium nitrides - Indium nitrides
2828Indium nitrides - MOCVD
2727Atomic force microscopy - MOCVD
2626MOCVD - Multiple quantum well
2626Gallium nitrides - MOCVD
Documents par ordre de pertinence
001951 (2004) Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
001547 (2006) Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD
001610 (2006) Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer
001410 (2007) Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction
001571 (2006) Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
001782 (2005) Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates
001952 (2004) Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition
001A26 (2004) Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells
001A34 (2004) Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition
001B98 (2003) Growth temperature effect on the optical and material properties of AlxInxGa1-x-yN epilayers grown by MOCVD
001006 (2008) The characterization and properties of InN grown by MOCVD
001262 (2007) The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
001265 (2007) The high mobility InN film grown by MOCVD with GaN buffer layer
001300 (2007) Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition
001345 (2007) Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching
001365 (2007) Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes
001440 (2007) Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
001636 (2006) Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition
001767 (2005) Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells
001783 (2005) Low-temperature growth of InN by MOCVD and its characterization
001970 (2004) Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface
001992 (2004) Influence of threading dislocations on the properties of InGaN-based multiple quantum wells
001996 (2004) Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers
001B43 (2003) Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
001B99 (2003) Growth of nanoscale InGaN self-assembled quantum dots
001C17 (2003) Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells
001C18 (2003) Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells
001D18 (2002) The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method
001D80 (2002) Estimation of InN phase inclusion in InGaN films grown by MOVPE
001E10 (2002) A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition
002114 (2000) Elastic strain in InGaN and AlGaN layers
000823 (2011) Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
000907 (2011) Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method
001083 (2008) Nitrogen Incorporation Characteristics of 4H-SiC Epitaxial Layer
001266 (2007) The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE
001267 (2007) The growth and field electron emission of InGaN nanowires
001334 (2007) Parameters-dependent third-order nonlinear optical susceptibility for quadratic electro-optic effect in GaN/InGaN multiple quantum wells
001370 (2007) Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium
001464 (2007) Controlled growth of nanostructured III-nitride films via a reactive magnetron sputtering method
001476 (2007) Cathodoluminescence study of InGaN/GaN quantum-well LED structures grown on a Si substrate
001501 (2006) Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
001513 (2006) Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
001523 (2006) Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation
001537 (2006) Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition
001568 (2006) Polar oscillation and dispersion properties of quasi-confined optical phonon modes in a wurtzite GaN/AlxGa1-xN nanowire
001577 (2006) Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes
001614 (2006) High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD
001635 (2006) Exciton in wurtzite GaN/AlxGa1-xN coupled quantum dots
001674 (2006) Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
001693 (2006) A 1.5 μm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD
001709 (2005) The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE
001749 (2005) Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
001765 (2005) Parameters-dependent nonlinear absorptions in InGaN/GaN MQW and GaN film
001814 (2005) Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD
001946 (2004) Study of stimulated emission from InGaN/GaN multiple quantum well structures
001965 (2004) Propagating optical-phonon modes and their electron-phonon interactions in wurtzite GaN/AlxGa1-xN quantum wells
001A24 (2004) Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD
001A25 (2004) Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells
001A29 (2004) Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure
001A45 (2004) An approach to determine the chemical composition in InGaN/GaN multiple quantum wells
001B23 (2003) Void formation and failure in InGaN/AlGaN double heterostructures
001B37 (2003) Subbands transport of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
001B46 (2003) Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate
001B71 (2003) Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures
001B84 (2003) Localized exciton dynamics in AlInGaN alloy
001B86 (2003) Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
001C20 (2003) Effect of surface treatments on Schottky contact on n-AlxGa1-xN/GaN heterostructures
001C22 (2003) Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure
001C26 (2003) Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer
001C50 (2003) A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition
001D19 (2002) The mechanism of blueshift in excitation-intensity-dependent photoluminescence spectrum of nitride multiple quantum wells
001D42 (2002) Quasi-thermodynamic analysis of MOVPE growth of GaxAlyIn1-x-yN
001D65 (2002) Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells
001D84 (2002) Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping
002332 (1998-03-30) Optical modes within III-nitride multiple quantum well microdisk cavities
002406 (1998) Growth and doping characteristics of InGaN films grown by low pressure MOCVD
002505 (1997) Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition
000161 (2013) Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition
000225 (2013) Improved Quantum Efficiency in Semipolar (1101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth
000308 (2013) Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
000518 (2012) Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
000576 (2012) Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
000581 (2012) Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
000600 (2012) Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
000708 (2011) Structural and optical properties of Ga2O3:In films deposited on MgO (1 0 0) substrates by MOCVD
000720 (2011) Self-assembled InAs/GaAs quantum dot molecules with InxGa1- xAs strain-reducing layer
000805 (2011) Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
000806 (2011) Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD
000808 (2011) Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
000827 (2011) Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers
000843 (2011) Growth mechanism of vertical compositional inhomogeneities in AlInN films
000915 (2011) Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate
000995 (2010) The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition
000A74 (2010) Performance study of InAs/GaAs quantum dot covered by graded InxGa1-xAs layer
000B11 (2010) Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
000B24 (2010) InN layers grown by MOCVD on SrTi03 substrates
000B38 (2010) High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells for General Lighting Application
000B55 (2010) Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAIO2(100) substrates
000C01 (2010) Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method
000C20 (2010) Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD
Wicri

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