Le cluster Experimental study - III-V semiconductors
| 002228 (1999) | Substrate surface atomic structure influence on the growth of InAlAs quantum dots | |
| 002232 (1999) | Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures | |
| 002726 (1995) | Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells | |
| 001923 (2004) | Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy | |
| 001B51 (2003) | Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots | |
| 001B68 (2003) | Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells | |
| 001C24 (2003) | Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate | |
| 001C35 (2003) | Capacitance-voltage spectroscopy of In0.5Ga0.5As self-assembled quantum dots in double quantum wells under selective photo-excitation | |
| 001C46 (2003) | Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer | |
| 001D13 (2002) | Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure | |
| 001F02 (2001) | Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) | |
| 001F14 (2001) | Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer | |
| 001F20 (2001) | Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures | |
| 001F23 (2001) | Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0≤x≤0.3) layer | |
| 001F50 (2001) | Experimental investigation of photoluminescence dynamics of cavity polaritons under nonresonant excitation | |
| 001F59 (2001) | Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands | |
| 002053 (2000) | The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate | |
| 002059 (2000) | Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers | |
| 002075 (2000) | Pressure behaviour of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots with multi-modal distribution in size | |
| 002103 (2000) | Growth and characterization of high-quality GaInAs/AlInAs triple wells | |
| 002122 (2000) | Effect of rapid thermal annealing on InGaAs/GaAs quantum wells | |
| 002137 (2000) | Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy | |
| 002211 (1999) | Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion | |
| 002216 (1999) | Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces | |
| 002239 (1999) | Si doping effect on self-organized InAs/GaAs quantum dots | |
| 002241 (1999) | Self-organization of the InGaAs/GaAs quantum dots superlattice | |
| 002253 (1999) | Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) : Special issue papers on quantum dots | |
| 002351 (1998) | The self-organized In0-25Ga0-75As quantum dots grown by migration enhanced epitaxy | |
| 002365 (1998) | Photoluminescence study of InGaAs/InAlAs single and multiple quantum wells | |
| 002366 (1998) | Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells | |
| 002380 (1998) | Multi-sheets In0.25Ga0.75As quantum dots grown by migration-enhanced epitaxy | |
| 002490 (1997) | Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells | |
| 002506 (1997) | Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures | |
| 002513 (1997) | GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N Configuration | |
| 002617 (1996) | GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells | |
| 002622 (1996) | Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown the molecular beam epitaxy and hydrogen treatment | |
| 002704 (1995) | Photoluminescence studies of modulation-doped In0.60Ga0.40As/In0.52Al0.48As strained multiple quantum wells | |
| 002789 (1994) | Optical studies of strained InGaAs/GaAs single quantum wells | |
| 001078 (2008) | Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique | |
| 001518 (2006) | The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content | |
| 001569 (2006) | Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well | |
| 001614 (2006) | High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD | |
| 001648 (2006) | Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy | |
| 001684 (2006) | Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing | |
| 001842 (2005) | Continuous-wave operation quantum cascade lasers at 7.95 μm | |
| 001888 (2004-05) | Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy | |
| 001904 (2004-03-29) | Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface | |
| 001953 (2004) | Steady-state and small signal analysis of terahertz ballistic tunnel transit-time oscillator | |
| 001973 (2004) | Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer | |
| 001975 (2004) | Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy | |
| 001977 (2004) | Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers | |
| 001987 (2004) | MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications | |
| 001A08 (2004) | Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD | |
| 001A23 (2004) | Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas | |
| 001A27 (2004) | Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 μm emission self-assembled InAs/GaAs quantum dots | |
| 001A37 (2004) | Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures | |
| 001A58 (2003-11-24) | Enhancement of room-temperature photoluminescence in InAs quantum dots | |
| 001A81 (2003-08-11) | Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers | |
| 001A84 (2003-07-28) | Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors | |
| 001A93 (2003-06-02) | Temperature dependence of photoreflectance in InAs/GaAs quantum dots | |
| 001B09 (2003-03-01) | Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters | |
| 001B13 (2003-02-03) | Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity | |
| 001B29 (2003) | The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing | |
| 001B45 (2003) | Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer | |
| 001B90 (2003) | In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate | |
| 001B91 (2003) | In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(0 0 1) substrate | |
| 001C03 (2003) | GalnNAs: Growth and characterization | |
| 001C23 (2003) | Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots | |
| 001C29 (2003) | Deep level transient spectroscopy of vertically stacked InAs/Al0.5Ga0.5As self-assembled quantum dots | |
| 001C74 (2002-07-15) | Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well | |
| 001C81 (2002-05-13) | Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP | |
| 001D34 (2002) | Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer | |
| 001D44 (2002) | Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer | |
| 001D57 (2002) | Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer | |
| 001D61 (2002) | Influence of strain on annealing effects of In(Ga)As quantum dots | |
| 001D62 (2002) | Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots | |
| 001D85 (2002) | Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots | |
| 001D88 (2002) | Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm | |
| 001E13 (2001-12-15) | Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures | |
| 001E14 (2001-12-15) | Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells | |
| 001E17 (2001-12-01) | Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector | |
| 001E38 (2001-08-15) | Thermal redistribution of photocarriers between bimodal quantum dots | |
| 001E42 (2001-07-15) | Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs | |
| 001E78 (2001-01) | Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy | |
| 001E96 (2001) | Surface corrugation of In0.15Ga0.85As layers grown on (5 5 3) b-oriented GaAs substrates by molecular beam epitaxy | |
| 001F07 (2001) | Self-assembled quantum dots, wires and quantum-dot lasers | |
| 001F09 (2001) | Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers | |
| 001F21 (2001) | Optical properties of InGaAs quantum dots formed on InAlAs wetting layer | |
| 001F34 (2001) | InAs self-assembled quantum dots on GaAs/InP by low-pressure metal-organic chemical vapour deposition | |
| 001F47 (2001) | Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy | |
| 001F73 (2001) | Analysis of room temperature PL spectra of InAs/GaAs/InP and InAs/InP self-assembled QDs : A five-band study | |
| 001F85 (2000-12-18) | Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells | |
| 001F95 (2000-10-15) | Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well | |
| 001F97 (2000-10-02) | X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices | |
| 002000 (2000-09-15) | Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots | |
| 002013 (2000-06-12) | Tuning of conduction intersublevel absorption wavelengths in (In, | |
| 002025 (2000-03-20) | Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures | |
| 002035 (2000-02-15) | Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots | |
| 002038 (2000-02-01) | Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence | |
| 002057 (2000) | Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution |
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