Le cluster Gallium arsenides - Indium arsenides
| 002228 (1999) | Substrate surface atomic structure influence on the growth of InAlAs quantum dots | |
| 001842 (2005) | Continuous-wave operation quantum cascade lasers at 7.95 μm | |
| 001A37 (2004) | Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures | |
| 001B45 (2003) | Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer | |
| 001C33 (2003) | Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser | |
| 001F59 (2001) | Effect of InxGa1-xAs (0≤x≤0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands | |
| 002048 (2000) | Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate | |
| 002058 (2000) | Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots | |
| 002059 (2000) | Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers | |
| 002067 (2000) | Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy | |
| 002070 (2000) | Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy | |
| 002146 (2000) | 1.35 μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition | |
| 002216 (1999) | Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces | |
| 002232 (1999) | Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures | |
| 002241 (1999) | Self-organization of the InGaAs/GaAs quantum dots superlattice | |
| 002242 (1999) | Self-assembled InAs and In0.9Al0.1As quantum dots on (0 0 1)InP substrates grown by molecular beam epitaxy (MBE) | |
| 002274 (1999) | Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy | |
| 002391 (1998) | InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy | |
| 002426 (1998) | Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy | |
| 000242 (2013) | Growth of metamorphic InGaP layers on GaAs substrates | |
| 001388 (2007) | Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors | |
| 001594 (2006) | MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting | |
| 001776 (2005) | Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells | |
| 001784 (2005) | Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy | |
| 001849 (2005) | Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions | |
| 001923 (2004) | Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy | |
| 001973 (2004) | Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer | |
| 001975 (2004) | Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy | |
| 001B29 (2003) | The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing | |
| 001B90 (2003) | In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate | |
| 001C23 (2003) | Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots | |
| 001D61 (2002) | Influence of strain on annealing effects of In(Ga)As quantum dots | |
| 001D85 (2002) | Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots | |
| 001D88 (2002) | Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 μm | |
| 001E96 (2001) | Surface corrugation of In0.15Ga0.85As layers grown on (5 5 3) b-oriented GaAs substrates by molecular beam epitaxy | |
| 001F02 (2001) | Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001) | |
| 001F07 (2001) | Self-assembled quantum dots, wires and quantum-dot lasers | |
| 001F10 (2001) | Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy | |
| 001F22 (2001) | Multiple quantum wells and laser structures containing InAs quantum dots grown by molecular-beam epitaxy | |
| 001F27 (2001) | MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes | |
| 001F47 (2001) | Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy | |
| 002068 (2000) | Self-assembled InAs quantum wires on InP(001) | |
| 002103 (2000) | Growth and characterization of high-quality GaInAs/AlInAs triple wells | |
| 002122 (2000) | Effect of rapid thermal annealing on InGaAs/GaAs quantum wells | |
| 002125 (2000) | Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots | |
| 002214 (1999) | Uniformity enhancement of the self-organized InAs quantum dots | |
| 002215 (1999) | Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces | |
| 002233 (1999) | Structural and optical characterization of InAs nanostructures grown on high-index InP substrates | |
| 002234 (1999) | Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates | |
| 002267 (1999) | InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(0 0 1) | |
| 002351 (1998) | The self-organized In0-25Ga0-75As quantum dots grown by migration enhanced epitaxy | |
| 002368 (1998) | Photoluminescence from InAs quantum dots on GaAs(100) | |
| 002581 (1996-01-01) | Photoluminescence studies of InAs/InGaAs/AlAs strained single quantum well structures | |
| 002599 (1996) | Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE | |
| 002617 (1996) | GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells | |
| 002629 (1995-12-04) | Optical investigation of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells | |
| 002668 (1995-05-01) | Spectroscopic studies of the effects of two-dimensional electron gas on interband transitions | |
| 002767 (1994-04-11) | Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor | |
| 000113 (2013) | Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire | |
| 000423 (2012) | Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties | |
| 000703 (2011) | Study of molecular-beam epitaxy growth on patterned GaAs ( 1 0 0) substrates by masked indium ion implantation | |
| 000730 (2011) | Quantum dot lasers grown by gas source molecular-beam epitaxy | |
| 000850 (2011) | GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy | |
| 000868 (2011) | Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy | |
| 000908 (2011) | Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy | |
| 000D84 (2009) | Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range | |
| 000E52 (2009) | Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method | |
| 001034 (2008) | Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step | |
| 001062 (2008) | Piezoresistivity in GaAs/InxGa1-xAs/AlAs superlattice structures | |
| 001078 (2008) | Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique | |
| 001079 (2008) | Optical properties of InAs/In0.15Ga0.85As quantum dots-in-a-well studied by piezomodulated reflectance spectroscopy | |
| 001250 (2007) | Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well | |
| 001318 (2007) | Pseudospin in Si δ-doped InAlAs/InGaAs/InAlAs single quantum well | |
| 001358 (2007) | Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy | |
| 001359 (2007) | Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm | |
| 001397 (2007) | Fabrication of ultra-low density and long-wavelength emission InAs quantum dots | |
| 001507 (2006) | Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots | |
| 001518 (2006) | The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content | |
| 001522 (2006) | Temperature dependence of surface quantum dots grown under frequent growth interruption | |
| 001539 (2006) | Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate | |
| 001569 (2006) | Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well | |
| 001579 (2006) | Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness | |
| 001582 (2006) | Optical and local current studies on InAs/GaAs quantum dots | |
| 001595 (2006) | Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy | |
| 001603 (2006) | Influence of dislocation stress field on distribution of quantum dots | |
| 001684 (2006) | Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing | |
| 001701 (2005) | Time-dependent transport properties in quantum well with thin inserted layer | |
| 001711 (2005) | The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots | |
| 001713 (2005) | The effect of In content on high-density InxGa1-xAs quantum dots | |
| 001735 (2005) | Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm | |
| 001747 (2005) | Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy | |
| 001807 (2005) | High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array | |
| 001832 (2005) | Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001) | |
| 001922 (2004) | Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique | |
| 001977 (2004) | Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers | |
| 001998 (2004) | InAs nanostructure grown with different growth rate in InAlAs matrix on InP (001) substrate | |
| 001A24 (2004) | Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD | |
| 001A27 (2004) | Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 μm emission self-assembled InAs/GaAs quantum dots | |
| 001B47 (2003) | Strain relaxation of InAs epilayer on GaAs under In-rich conditions | |
| 001B51 (2003) | Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots |
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